X2N7002.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 X2N7002 데이타시트 다운로드

No Preview Available !

CORPORATION
N-Channel Enhancement-Mode
MOS Transistor
2N7002
DESCRIPTION
Calogic’s 2N7002 device type is a vertical DMOS FET
transistor housed in a surface mount SOT-23 for
micro-assembly applications. The device is an excellent
choice for switching applications where breakdown (BV) and
low on-resistance are important.
ORDERING INFORMATION
Part Package
2N7002 Plastic SOT-23 Package
X2N7002 Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
PIN CONFIGURATION
1 DRAIN
2 SOURCE
3 GATE
1
TOP VIEW
2
3
3
CD5
PRODUCT SUMMARY
1
2
SOT-23
D
G
S
V(BR)DSS
(V)
60
rDS(ON)
()
7.5
ID
(A)
0.115
PRODUCT MARKING
2N7002
V02
9-3

No Preview Available !

2N7002
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ
Tstg
TL
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
LIMITS
60
±40
0.115
0.073
0.8
200
80
-55 to 150
-55 to 150
300
UNITS
V
A
mW
oC
TEST CONDITIONS
TA = 25oC
TA = 100oC
TA = 25oC
TA = 100oC
THERMAL RESISTANCE RATINGS
NOTE:
SYMBOL
RthJA
THERMAL RESISTANCE
Junction-to-Ambient
1. Pulse width limited by maximum junction temperature.
LIMITS
625
UNITS
K/W
SPECIFICATIONS1
SYMBOL
STATIC
V(BR)DSS
VGS(th)
IGSS
PARAMETER
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
IDSS
ID(ON)
Zero Gate Voltage Drain Current
On-State Drain Current3
rDS(ON)
Drain-Source On-Resistance3
MIN
60
1
500
VDS(ON)
Drain-Source On-Voltage3
gFS Forward Transconductance3
gOS Common Source Output Conductance3, 4
DYNAMIC
Ciss
Coss
Input Capacitance
Output Capacitance4
Crss Reverse Transfer Capacitance
SWITCHING
tON Turn-On Time
tOFF
Turn-Off Time
80
TYP2
70
1.9
1000
5
9
2.5
4.4
0.25
1.25
2.2
170
500
16
11
2
7
7
MAX
2.5
±100
1
500
7.5
13.5
7.5
13.5
0.375
3.75
6.75
50
25
5
UNIT
TEST CONDITIONS
ID = 10µA, VGS = 0V
V
VDS = VGS, ID = 0.25mA
nA VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
µA TC = 125oC
mA VDS = 2VDS(ON), VGS = 10V
VGS = 5V, ID = 50mA
TC = 125oC
VGS = 10V, ID = 0.5A
TC = 125oC
VGS = 5V, ID = 50mA
V VGS = 10V, ID = 0.5A
TC = 125oC4
mS VDS = 10V, ID = 0.2A
µS VDS = 5V, ID = 50mA
pF VDS = 25V, VGS = 0V, f = 1MHz
20 VDD = 30V, RL = 150, ID = 0.2A
nS
VGEN = 10V, RG = 25
(Switching time is essentially
20 independent of operating temperature)
NOTES: 1. TA = 25oC unless otherwise specified.
2. For design aid only, not subject to production testing.
3. Pulse test; PW = 80µS, duty cycle 1%.
4. This parameter not registered with JEDEC.
9-4