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Diode Protected P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier/Switch
3N172 / 3N173
CORPORATION
FEATURES
High Input Impedance
•• Diode Protected Gate
PIN CONFIGURATION
TO-72
1503Z
C,B
G
S
D
DEVICE SCHEMATIC
1
2
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
3N173. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µA
Gate Reverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Storage Temperature . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N172-73
X3N172-73
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
3
4 0200
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
IGSS
BVGSS
BVDSS
BVSDS
VGS(th)
VGS
IDSS
ISDS
rDS(on)
ID(on)
Gate Reverse Current
Gate Breakdown Voltage
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
Gate Source Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Source Current
Drain Source On Resistance
On Drain Current
3N172
MIN MAX
-200
-0.5
-40 -125
-40
-40
-2.0 -5.0
-2.0 -5.0
-3.0 -6.5
-0.4
-0.4
250
-5.0 -30
3N173
MIN MAX
-500
-1.0
-30 -125
-30
-30
-2.0 -5.0
-2.0 -5.0
-2.5 -6.5
-10
-10
350
-5.0 -30
UNITS
TEST CONDITIONS
pA
µA
V
nA
ohms
mA
VGS = -20V
TA = +125oC
ID = -10µA
ID = -10µA
IS = -10µA, VDB = 0
VDS = VGS, ID = -10µA
VDS = -15V, ID = -10µA
VDS = -15V, ID = -500µA
VDS = -15V, VGS = 0
VSD = -15V, VDB = 0, VGD = 0
VGS = -20V, ID = -100µA
VDS = -15V, VGS = -10V

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CORPORATION
3N172 / 3N173
SMALL-SIGNAL ELECTRICAL CHARACTERISTICS TA = 25oC and Bulk (substrate) Lead Connected to Source
SYMBOL
PARAMETER
| yfs |
| yos |
Ciss
Crss
Coss
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Forward Transadmittance*
Magnitude of Small-Signal, Common-Source,
Short-Circuit, Output Admittance*
Small-Signal, Common-Source, Short-Circuit,
Input Capacitance*
Small-Signal, Common-Source, Short-Circuit,
Reverse Transfer Capacitance*
Small-Signal, Common-Source, Short-Circuit,
Output Capacitance*
3N172
3N173
UNITS
MIN MAX MIN MAX
TEST CONDITIONS
1500 4000 1000 4000 µS VDS = -15V, ID = -10mA, f = 1kHz
250 250 µS VDS = -15V, ID = -10mA, f = 1kHz
3.5 3.5 pF VDS = -15V, ID = -10mA, f = 1MHz
1.0 1.0 pF VDS = -15V, ID = -10mA, f = 1MHz
3.0 3.0 pF VDS = -15V, ID = -10mA, f = 1MHz
NOISE CHARACTERISTICS
SYMBOL
PARAMETER
TYPICAL UNITS
TEST CONDITIONS
NF
Common-Source Spot Noise Figure
1.0
dB VDS = -15V, ID = -1mA, f = 1kHz, RG = 1M
SWITCHING CHARACTERISTICS TA = 25oC Bulk (substrate) Lead Connected to Source
SYMBOL
PARAMETER
3N172
MIN MAX
3N173
MIN MAX
UNITS
TEST CONDITIONS
td (on)
tr
Turn-On Delay Time*
Rise Time*
12 12 VDD = -15V, ID (on) = -10mA
24 24 ns RG = RL = 1.4k
toff Turn-Off Delay Time*
50 50 See Test Circuit Below
*Registered JEDEC Data
SWITCHING TIME DETAIL
VDD
MEASUREMENTS ON SAMPLING OSCILLOSCOPE WITH
trise < 0.2ns
Cin < 2.0pF
Rin > 10M
INPUT PULSE
trise < 2ns
PULSE WIDTH > 200ns
VIN
VOUT
10%
t4(on)
PULSE
WIDTH
50%
50%
90%
tr
10%
toff
90%
90%
-0V
-VIN
-1V
-15V
0210
VIN
50
RG
RL
VOUT
D.U.T.
1000
500
100
50
10
5.0
1.0
-0.1
0220
SWITCHING TIMES vs. ON-STATE
DRAIN CURRENT
VDD = 15V
RG = RL = 1.4K
t off
t rise
td(on)
-0.5 -1.0
-5.0 -10
ON-STATE DRAIN CURRENT - (I D(on) ) - mA
0230