X3N190-91.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 X3N190-91 데이타시트 다운로드

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Dual P-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
3N190 / 3N191
CORPORATION
FEATURES
Very High Input Impedance
High Gate Breakdown 3N190-3N191
•• Low Capacitance
PIN CONFIGURATION
TO-99
2506
C
G2
G1
S2
D2
S1 D1
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 1)
3N190, 3N191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Transient Gate-Source Voltage (Note 1 and 2) . . . . . . . ±125V
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V
Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation
One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW
Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
3N190-91 Hermetic TO-99
X3N190-91 Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
IGSSR
Gate Reverse Current
IGSSF
Gate Forward Current
BVDSS
BVSDS
VGS(th)
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
VGS Gate Source Voltage
IDSS Zero Gate Voltage Drain Current
3N190/91
MIN MAX
10
-10
-25
-40
-40
-2.0 -5.0
-2.0 -5.0
-3.0 -6.5
-200
UNITS
TEST CONDITIONS
VGS = 40V
pA VGS = -40V
ID = -10µA
IS = -10µA, VBD = 0
VDS = -15V, ID = -10µA
V VDS = VGS, ID = -10µA
VDS = -15V, ID = -500µA
VDS = -15V
TA = +125oC
ISDS
rDS(on)
Source Drain Current
Drain-Source on Resistance
-400
300
VSD = -15V, VDB = 0
ohms VDS = -20V, ID = -100µA
ID(on)
On Drain Current
-5.0 -30.0 mA VDS = -15V, VGS = -10V

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CORPORATION
3N190 / 3N191
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
gfs Forward Transconductance (Note 3)
Yos Output Admittance
Ciss Input Capacitance Output Shorted (Note 5)
Crss Reverse Transfer Capacitance (Note 5)
Coss Output Capacitance Input Shorted (Note 5)
3N190/91
UNITS
MIN MAX
1500 4000
300
µS
4.5
1.0 pF
3.0
TEST CONDITIONS
VDS = -15V, ID = -10mA
f = 1kHz
f = 1MHz
SWITCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
td(on)
tr
Turn On Delay Time
Rise Time
15
30 ns VDD = -15V, ID = -10mA, RG = RL = 1.4k(Note 5)
toff Turn Off Time
50
MATCHING CHARACTERISTICS (TA = 25oC and VBS = 0 unless otherwise specified) 3N188 and 3N190
SYMBOL
Yfs1 / Yfs2
VGS1-2
VGS12
T
VGS12
T
PARAMETER
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
MIN
0.85
MAX
1.0
100
100
100
UNITS
mV
µV/ oC
µV/ oC
TEST CONDITIONS
VDS = -15V, ID = -500µA, f = 1kHz
VDS = -15V, ID = -500µA
VDS = -15V, ID = -500µA,
T = -55oC to +25oC
VDS = -15V, ID = -500µA
T = +25oC to +125oC
NOTES: 1. Per transistor.
2. Approximately doubles for every 10oC increase in TA.
3. Pulse test duration = 300µs; duty cycle 3%.
4. Measured at end points, TA and TB.
5. For design reference only, not 100% tested.