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VQ1001J/P
Vishay Siliconix
Quad N-Channel 30-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)
VQ1001J
VQ1001P
1 @ VGS = 12 V
30
1 @ VGS = 12 V
VGS(th) (V)
0.8 to 2.5
0.8 to 2.5
ID (A)
0.83
0.53
FEATURES
D Low On-Resistance: 0.85 W
D Low Threshold: 1.4 V
D Low Input Capacitance: 38 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Dual-In-Line
D1 1
N S1 2
G1 3
NC 4
G2 5
N S2 6
D2 7
14 D4
13 S4
12 G4
11 NC
10 G3
9 S3
8 D3
N
N
Top View
Plastic: VQ1001J
Sidebraze: VQ1001P
Device Marking
Top View
VQ1001J
“S” fllxxyy
VQ1001P
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Single
Total Quad
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation (Single)
Thermal Resistance, Junction-to-Ambient (Single)
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
VQ1001J
VQ1001P
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
30
"30
"20
0.83
0.53
3
1.3
0.52
96
–55 to 150
2
0.8
62.5
Unit
V
A
W
_C/W
_C
Document Number: 70219
S-04279—Rev. D, 16-Jul-01
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VQ1001J/P
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
Forward Transconductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "16 V
TJ = 125_C
VDS = 30 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 10 V, VGS = 12 V
VGS = 5 V, ID = 0.2 A
VGS = 12 V, ID = 1 A
TJ = 125_C
VDS = 10 V, ID = 0.5 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Turn-On Time
Turn-Off Time
tON
tOFF
VDD = 15 V, RL = 23 W, ID ^ 0.6 A
VGEN = 10 V, RG = 25 W
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
Min
30
0.8
2
200
Limits
Typa
Max
45
1.5 2.5
"100
"500
10
500
3.5
1.2 1.75
0.8 1
1.5 2
500
38 110
33 110
8 35
9 30
14 30
Unit
V
nA
mA
A
W
mS
pF
ns
VNDQ03
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Document Number: 70219
S-04279Rev. D, 16-Jul-01

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VQ1001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0
VGS = 10 V
7V
6V
Output Characteristics for Low Gate Drive
200
VGS = 10 V
2.9 V
1.6 160
2.7 V
5V
1.2 120
2.5 V
0.8 4 V 80
2.3 V
0.4
0
0
3V
2V
123 4
VDS Drain-to-Source Voltage (V)
5
40
0
0
2.1 V
1.7 V
0.4 0.8 1.2 1.6
VDS Drain-to-Source Voltage (V)
2.0
Transfer Characteristics
500
On-Resistance vs. Gate-to-Source Voltage
400 VDS = 15 V
3
ID = 0.2 A
0.5 A
300 2
200
100
0
0
TJ = 125_C
25_C
55_C
12 34
VGS Gate-Source Voltage (V)
5
On-Resistance vs. Drain Current
2.5
2.0
VGS = 4.5 V
1.5
1.0
6V
10 V
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
ID Drain Current (A)
Document Number: 70219
S-04279Rev. D, 16-Jul-01
1 1.0 A
0
0
2.25
4 8 12 16
VGS Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
20
2.00
1.75
1.50
1.25
VGS = 10 V
ID = 0.5 A
0.1 A
1.00
0.75
0.50
50
10 30
70 110
TJ Junction Temperature (_C)
150
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VQ1001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
VDS = 10 V
TJ = 150_C
1
Capacitance
120
VGS = 0 V
100 f = 1 MHz
80
100_C
0.1
25_C
0.01
0.6
55_C
0.8 1.0 1.2 1.4 1.6 1.8
VGS Gate-to-Source Voltage (V)
2.0
60
40
20
0
0
Ciss
Coss
Crss
10 20 30 40
VDS Drain-to-Source Voltage (V)
50
Gate Charge
6
ID = 1 A
5
Load Condition Effects on Switching
100
VDD = 25 V
RG = 25 W
VGS = 0 to 10 V
4 VDS = 15 V
3
24 V
2
1
10
td(on)
tr
td(off)
tf
0
0 80 160 240 320 400
Qg Total Gate Charge (pC)
Drive Resistance Effects on Switching
100
VDD = 25 V
RL = 24 W
VGS = 0 to 10 V
ID = 1 A
10
1
10
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11-4
td(on)
td(off)
tf
tr
50
RG Gate Resistance ( W)
100
1
0.1
500
400
300
1
ID Drain Current (A)
Transconductance
TJ = 55_C
25_C
10
150_C
200
100
0
0
VDS = 7.5 V
300 ms, 1% Duty Cycle
Pulse Test
100 200 300 400
ID Drain Current (mA)
500
Document Number: 70219
S-04279Rev. D, 16-Jul-01