V62C2802048LL-100T.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 V62C2802048LL-100T 데이타시트 다운로드

No Preview Available !

V62C2802048L(L)
Ultra Low Power
256K x 8 CMOS SRAM
Features
• Low-power consumption
- Active: 35mA at 55ns
- Stand-by: 10 µA (CMOS input/output)
2 µA CMOS input/output, L version
• Single +2.2 to 2.7V Power Supply_Typical
• Extented Voltage from 2.2 to 3.6V.
• Equal access and cycle time
• 55/70/85/100 ns access time
• Easy memory expansion with CE1, CE2
and OE inputs
• 1.0V data retention mode
• TTL compatible, Tri-state input/output
• Automatic power-down when deselected
• Package available: 32L TSOP(I)/ STSOP(I)
• 48 Ball CSP_BGA
Functional Description
The V62C2802048L is a low power CMOS Static RAM
organized as 262,144 words by 8 bits. Easy memory exp-
ansion is provided by an active LOW CE1, an active
HIGH CE2, an active LOW OE, and Tri-state I/O’s. This
device has an automatic power-down mode feature when
deselected.
Writing to the device is accomplished by taking Chip
Enable 1 (CE1) with Write Enable (WE) LOW, and Chip
Enable 2 (CE2) HIGH. Reading from the device is per-
formed by taking Chip Enable 1 (CE1) with Output
Enable (OE) LOW while Write Enable (WE) and Chip
Enable 2 (CE2) is HIGH. The I/O pins are placed in a
high-impedance state when the device is deselected: the
outputs are disabled during a write cycle.
TheV62C2802048LL comes with a 1V data retention fe-
ature and Lower Standby Power. The V62C2802048L is
avalable in a 32-pin 8 x 20 mm TSOP1 / STSOP 8x13.4 mm
and CSP type 48-fpBGA packages.
Logic Block Diagram
32-Pin TSOP1 / STSOP (CSP_BGA See next page)
INPUT BUFFER
A0
A1
A2
A3
A4
A5 Cell Array
A6
A7
A8
A9
COLUMN DECODER
A10 A11 A12 A13 A14 A15 A16 A17
I/O8
I/O1
CONTROL
CIRCUIT
OE
WE
CE1
CE2
A11
A9
A8
A13
WE
CE2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
REV. 1.2 May 2001 V62C2802048L(L)
1
32 OE
31 A10
30 CE1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 GND
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3

No Preview Available !

V62C2802048L(L)
MOSEL VITELIC V62C2802048L(L)B
1 23 4 5 6
1
A A0
B I/O5
C I/O6
23
A1 CS2
A2 WE
NC
NC
4
A3
A4
A5
56
A6 A8
A7 I/O1
NC
I/O2
D VSS
E VCC
NC
NC
NC
NC
NC
NC
NC VCC
NC
VSS
Top View
F I/O7
NC
NC
A17
G I/O8
OE
CS1
A16
H A9
A10
A11
Note: NC means no Ball.
A12
Top View
NC
I/O3
A15
A13
I/O4
A14
48 Ball - 9x12 fpBGA (Ultra Low Power)
PACKAGE OUTLINE DWG.
SIDE VIEW
aaa
D
D1
6
5
4
3
2
1
A BCDE FGH
BOTTOM VIEW
b
SOLDER BALL
SYMBOL
A
A1
b
c
D
D1
E
E1
e
aaa
UNIT:MM
1.05+0.15
0.25+0.05
0.35+.05
0.30(TYP)
12.00+0.10
5.25
9.00+0.10
3.75
0.75TYP
0.10
REV. 1.2 May 2001 V62C2802048L(L)
2

No Preview Available !

V62C2802048L(L)
Absolute Maximum Ratings *
Parameter
Voltage on Any Pin Relative to Gnd
Power Dissipation
Storage Temperature (Plastic)
Temperature Under Bias
Symbol
Vt
PT
Tstg
Tbias
Minimum
-0.5
-55
-40
Maximum
3.6
1.0
+150
+85
Unit
V
W
0C
0C
* Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at these or any conditions outside those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth Table
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
H
H
L
* Key: X = Don’t Care, L = Low, H = High
OE
X
X
L
H
X
Data
High-Z
High-Z
Data Out
High-Z
Data In
Mode
Standby
Standby
Active, Read
Active, Output Disable
Active, Write
Recommended Operating Conditions (TA = 00C to +700C / -400C to 850C**)
Parameter
Supply Voltage
Input Voltage
Symbol Min
Typ
Max
VCC 2.2 2.5
Gnd 0.0 0.0
2.7
0.0
VIH 2.0 - VCC + 0.2
VIL -0.5* -
0.6
* VIL min = -1.0V for pulse width less than tRC/2.
** For Industrial Temperature
Unit
V
V
V
V
REV. 1.2 May 2001 V62C2802048L(L)
3

No Preview Available !

V62C2802048L(L)
DC Operating Characteristics (Vcc = 2.2~2.7V, Gnd = 0V, TA = 00C to +700C / -400C to 850C)
Parameter
Input Leakage Current
Sym Test Conditions
IILII
Vcc = Max,
Vin = Gnd to Vcc
-55 -70 -85 -100
Unit
Min Max Min Max Min Max Min Max
- 1 - 1 - 1 - 1 µA
Output Leakage
Current
IILOI
CE1 = VIH or CE2 = VIL
Vcc= Max, VOUT = Gnd to Vcc
-
1
-
1
-
1
-
1 µA
Operating Power
Supply Current
ICC CE1 = VIL , CE2 = VIH
VIN = VIHor VIL ,IOUT=0mA
- 3 - 3 - 3 - 3 mA
Average Operating
Current
ICC1 CE1 = VIL , CE2 = VIH
IOUT = 0mA,
Min Cycle, 100% Duty
- 35 - 30 - 25 - 20 mA
ICC2 CE1 = 0.2V,
CE2 = Vcc - 0.2V
IOUT = 0mA,
Cycle Time=1µs, 100% Duty
- 3 - 3 - 3 - 3 mA
Standby Power Supply ISB CE1 = VIH or CE2 = VIL
Current (TTL Level)
- 0.5 - 0.5 - 0.5 - 0.5 mA
Standby Power Supply ISB1 CE1 > Vcc - 0.2V or
Current (CMOS
CE2 < 0.2V, f = 0
Level)
VIN < 0.2V or
VIN > Vcc- 0.2V
- 10 - 10 - 10 - 10 µA
L - 2 - 2 - 2 - 2 µA
Output Low Voltage
VOL IOL = 2 mA
- 0.4 - 0.4 - 0.4 - 0.4 V
Output High Voltage
VOH IOH = -2 mA
2.0 - 2.0 - 2.0 - 2.0 -
V
Capacitance (f = 1MHz, TA = 250C)
Parameter*
Symbol
Input Capacitance
Cin
I/O Capacitance
CI/O
* This parameter is guaranteed by device characterization and is not production tested.
AC Test Conditions
Input Pulse Level
0.6V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing
Reference Level
1.4V
Output Load Condition
70ns/85 ns
CL = 30pf + 1TTL Load
Load 100ns/120 ns CL= 100pf + 1TTL Load
Test Condition
Vin = 0V
Vin = Vout = 0V
Max
7
8
Unit
pF
pF
CL*
TTL
Figure A.
* Including Scope and Jig Capacitance
REV. 1.2 May 2001 V62C2802048L(L)
4

No Preview Available !

V62C2802048L(L)
Read Cycle (3,9) (Vcc = 2.2~2.7V, Gnd = 0V, TA = 00C to +700C / -400C to +850C)
Parameter
Symbol -55 -70 -85 -100 Unit Note
Read Cycle Time
Min Max Min Max Min Max Min Max
tRC
55 - 70 - 85 - 100 -
ns
Address Access Time
tAA - 55 - 70 - 85 - 100 ns
Chip Enable Access Time
tACE - 55 - 70 - 85 - 100 ns
Output Enable Access Time
tOE - 35 - 40 - 40 - 50 ns
Output Hold fromAddress Change
tOH
10 - 10 - 10 - 10
-
ns
Chip Enable to Output in Low-Z
tCLZ
10 - 10 - 10 - 10
-
ns 4,5
Chip Disable to Output in High-Z tCHZ - 25 - 30 - 35 - 40 ns 4,5
Output Enable to Output in Low-Z
tOLZ
5-5-5- 5
-
ns 4,5
Output Disable to Output in High-Z
tOHZ
- 25 - 25 - 30 - 35 ns 4,5
Power-Up Time
tPU
0-0-0- 0
-
ns
5
Power-Down Time
tPD
- 55 - 70 - 85 - 100 ns
5
Write Cycle (3,11) (Vcc = 2.2~2.7V, Gnd = 0V, TA = 00C to +700C / -400C to +850C)
Parameter
Write Cycle Time
Chip Enable to Write End
Address Setup to Write End
Address Setup Time
Write Pulse Width
Write Recovering Time
Data Valid to Write End
Data Hold Time
Write Enable to Output in High-Z
Output Active from Write End
Symbol -55 -70 -85
-100 Unit Note
Min Max Min Max Min Max Min Max
tWC
55 - 70 - 85 - 100 -
ns
tCW
45 - 60 - 70 - 80
-
ns
tAW
45 - 60 - 70 - 80
-
ns
tAS
0-0-0- 0
-
ns
tWP
45 - 50 - 60 - 70
-
ns
tWR
0-0-0- 0
-
ns
tDW
25 - 30 - 35 - 40
-
ns
tDH
0-0-0- 0
-
ns
tWZ - 25 - 30 - 35 - 40 ns 4,5
tOW
5-5-5- 5
-
ns 4,5
REV. 1.2 May 2001 V62C2802048L(L)
5