V62C3162048L.pdf 데이터시트 (총 13 페이지) - 파일 다운로드 V62C3162048L 데이타시트 다운로드

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Features
• Low-power consumption
- Active: 65mA ICC at 35ns
- Stand-by: 10 µA (CMOS input/output)
2 µA (CMOS input/output, L version)
• 35/45/55/70/85/100 ns access time
• Equal access and cycle time
• Single +2.7V to3.3V Power Supply
• Tri-state output
• Automatic power-down when deselected
• Multiple center power and ground pins for
improved noise immunity
• Individual byte controls for both Read and
Write cycles
• Available in 44 pin TSOP II / 48-fpBGA
V62C3162048L(L)
Ultra Low Power
128K x 16 CMOS SRAM
Functional Description
The V62C3162048L is a Low Power CMOS Static
RAM organized as 131,072 words by 16 bits. Easy
memory expansion is provided by an active LOW (CE)
and (OE) pin.
This device has an automatic power-down mode feature
when deselected. Separate Byte Enable controls (BLE
and BHE) allow individual bytes to be accessed. BLE
controls the lower bits I/O1 - I/O8. BHE controls the
upper bits I/O9 - I/O16.
Writing to these devices is performed by taking Chip
Enable (CE) with Write Enable (WE) and Byte Enable
(BLE/BHE) LOW.
Reading from the device is performed by taking Chip
Enable (CE) with Output Enable (OE) and Byte Enable
(BLE/BHE) LOW while Write Enable (WE) is held
HIGH.
Logic Block Diagram
TSOPII / 48-fpBGA
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
I/O1 - I/O8
I/O9 - I/O16
WE
OE
BHE
BLE
CE
Pre-Charge Circuit
Memory Array
1024 X 2048
Vcc
Vss
Data
Cont I/O Circuit
Data
Cont Column Select
A10 A11 A12 A13 A14 A15 A16
A4 1
A3 2
A2 3
A1 4
A0 5
CE 6
I/O1 7
I/O2 8
I/O3 9
I/O4 10
Vcc 11
Vss 12
I/O5 13
I/O6 14
I/O7 15
I/O8 16
WE 17
A16 18
A15 19
A14 20
A13 21
A12 22
44 A5
43 A6
42 A7
41 OE
40 BHE
39 BLE
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 Vss
33 Vcc
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 NC
27 A8
26 A9
25 A10
24 A11
23 NC
REV. 1.2 May 2001 V62C3162048L(L)
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V62C3162048L(L)
MOSEL VITELIC V62C3162048L(L)B
1 23 4 5 6
Top View
12
34
A BLE
OE
A0
A1
B I/O9
BHE
A3
A4
C I/O10
I/O11
A5
A6
D VSS
I/O12
NC
A7
E VCC
I/O13
NC
A16
F I/O15
I/O14
A14
A15
G I/O16
NC
A12
A13
H NC A8 A9
Note: NC means no Ball.
A10
Top View
56
A2 NC
CE
I/O1
I/O2 I/O3
I/O4 VCC
I/O5 VSS
I/O6 I/O7
WE
A11
I/O8
NC
48 Ball - 9x12 fpBGA (Ultra Low Power)
PACKAGE OUTLINE DWG.
SIDE VIEW
aaa
D
D1
6
5
4
3
2
1
A BCDE FGH
BOTTOM VIEW
b
SOLDER BALL
REV. 1.2 May 2001 V62C3162048L(L)
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SYMBOL
A
A1
b
c
D
D1
E
E1
e
aaa
UNIT:MM
1.05+0.15
0.25+0.05
0.35+.05
0.30(TYP)
12.00+0.10
5.25
9.00+0.10
3.75
0.75TYP
0.10

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V62C3162048L(L)
Absolute Maximum Ratings *
Parameter
Voltage on Any Pin Relative to Gnd
Power Dissipation
Storage Temperature (Plastic)
Temperature Under Bias
Symbol
Vt
PT
Tstg
Tbias
Minimum
-0.5
-55
-40
Maximum
+4.6
1.0
+150
+85
Unit
V
W
0C
0C
* Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat-
ing only and function operation of the device at these or any other conditions outside those indicated in the operational sections of this spec-
ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth Table
CE OE WE BLE BHE I/O1-I/O8 I/O9-I/O16
H X X X X High-Z
High-Z
L L H L H Data Out High-Z
L L H H L High-Z Data Out
L L H L L Data Out Data Out
L X L L L Data In Data In
L X L L H Data In High-Z
L X L H L High-Z Data In
L H H X X High-Z
High-Z
L X X H H High-Z High-Z
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Mode
Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Output Disable
Output Disable
* Key: X = Don’t Care, L = Low, H = High
Recommended Operating Conditions (TA = 00C to +700C / -400C to 850C**)
Parameter
Supply Voltage
Input Voltage
Symbol Min
Typ
Max Unit
VCC 2.7 3.0
Gnd 0.0 0.0
3.3
0.0
V
V
VIH 2.2 - VCC + 0.2 V
VIL -0.5* - 0.8 V
* VIL min = -2.0V for pulse width less than tRC/2.
** For Industrial Temperature
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V62C3162048L(L)
DC Operating Characteristics (Vcc = 2.7 to 3.3V, Gnd = 0V, TA = 00C to +700C / -400C to 850C)
Parameter
Input Leakage Current
Output Leakage
Current
Sym Test Conditions
IILII
Vcc = Max,
Vin = Gnd to Vcc
IILOI
CE = VIH or Vcc= Max,
VOUT = Gnd to Vcc
-55 -70 -85 -100
Unit
Min Max Min Max Min Max Min Max
- 1 - 1 - 1 - 1 µA
- 1 - 1 - 1 - 1 µA
Operating Power
Supply Current
ICC CE = VIL , VIN = VIH or VIL , - 5 - 5 - 5 - 5 mA
IOUT = 0
Average Operating
Current
ICC1 IOUT = 0mA,
Min Cycle, 100% Duty
- 50 - 45 - 40 - 40 mA
ICC2 CE < 0.2V
IOUT = 0mA,
- 3 - 3 - 3 - 3 mA
Cycle Time=1µs, Duty=100%
Standby Power Supply ISB CE = VIH
Current (TTL Level)
- 0.5 - 0.5 - 0.5 - 0.5 mA
Standby Power Supply ISB1 CE > Vcc - 0.2V
Current (CMOS Level)
VIN < 0.2V or
VIN > Vcc- 0.2V
- 10 - 10 - 10 - 10 µA
L - 2 - 2 - 2 - 2 µA
Output Low Voltage
VOL IOL = 2 mA
- 0.4 - 0.4 - 0.4 - 0.4 V
Output High Voltage VOH IOH = -2 mA
2.4 - 2.4 - 2.4 - 2.4 -
V
Capacitance (f = 1MHz, TA = 25oC)
Parameter*
Input Capacitance
I/O Capacitance
Symbol
Cin
CI/O
Test Condition
Vin = 0V
Vin = Vout = 0V
Max
7
8
Unit
pF
pF
* This parameter is guaranteed by device characterization and is not production tested.
AC Test Conditions
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing
Reference Level
0.6V to 2.2V
5ns
1.4V
Output Load Condition
55ns/70ns/85ns
Load for 100ns
CL = 30pf + 1TTL Load
CL = 100pf + 1TTL Load
CL*
TTL
Figure A.
* Including Scope and Jig Capacitance
REV. 1.2 May 2001 V62C3162048L(L)
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V62C3162048L(L)
DC Operating Characteristics (Vcc = 2.7 to 3.3V, Gnd = 0V, TA = 00C to +700C / -400C to 850C)
Parameter
Input Leakage Current
Output Leakage
Current
Sym Test Conditions
IILII
Vcc = Max,
Vin = Gnd to Vcc
IILOI
CE = VIH or Vcc= Max,
VOUT = Gnd to Vcc
-35 -45 Unit
Min Max Min Max
-1-1
µA
-1-1
µA
Operating Power
Supply Current
ICC CE = VIL , VIN = VIH or VIL ,
-
5
-
5
mA
IOUT = 0
Average Operating
Current
ICC1 IOUT = 0mA,
Min Cycle, 100% Duty
- 65 - 60 mA
ICC2 CE < 0.2V
IOUT = 0mA,
- 3 - 3 mA
Cycle Time=1µs, Duty=100%
Standby Power Supply ISB CE = VIH
Current (TTL Level)
- 0.5 - 0.5 mA
Standby Power Supply ISB1 CE > Vcc - 0.2V
Current (CMOS Level)
VIN < 0.2V or
VIN > Vcc- 0.2V
- 10 - 10
L- 2 - 2
µA
µA
Output Low Voltage
VOL IOL = 2 mA
- 0.4 - 0.4
V
Output High Voltage
VOH IOH = -2 mA
2.4 - 2.4 -
V
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