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Advanced Power MOSFET
IRFR/U130A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.092 (Typ.)
BVDSS = 100 V
RDS(on) = 0.11
ID = 13 A
D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
13
8.2
52
+_ 20
225
13
4.1
6.5
2.5
41
0.32
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.08
50
110
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation

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IRFR/U130A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- -- V VGS=0V,ID=250 µA
-- 0.11 -- V/ ΟC ID=250µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µ A
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
-- -- 100 µ A VDS=80V,TC=125ΟC
-- -- 0.11 VGS=10V,ID=6.5A
O4
-- 9.25 --
VDS=40V,ID=6.5A
O4
-- 610 790
-- 150 175 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 62 72
-- 13 40
-- 14 40
VDD=50V,ID=14A,
-- 55 110 ns RG=12
See Fig 13
-- 36 80
O4 O5
-- 27 36
-- 4.5 --
-- 12.8 --
VDS=80V,VGS=10V,
nC ID=14A
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 13
-- 52
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.5 V TJ=25ΟC,IS=13A,VGS=0V
-- 109 --
-- 0.41 --
ns TJ=25ΟC ,IF=14A
µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=2mH, IAS=13A, VDD=25V, RG=27 , Starting TJ =25 oC
O3 ISD <_ 14A, di/dt <_ 350A/µs, VDD<_ BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature

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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
101
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.20
0.15 VGS = 10 V
0.10
0.05
0.00
0
VGS = 20 V
@ Note : TJ = 25 oC
15 30 45
ID , Drain Current [A]
60
Fig 5. Capacitance vs. Drain-Source Voltage
1000
C iss
750
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C oss
500
C rss
250
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
IRFR/U130A
Fig 2. Transfer Characteristics
101
150 oC
100
25 oC
10-1
2
- 55 oC
@ Notes :
1. V = 0 V
GS
2. VDS = 40 V
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-Drain Voltage [V]
2.2
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID = 14.0 A
0
0 5 10 15 20 25 30
QG , Total Gate Charge [nC]

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IRFR/U130A
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9 @ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
1. V = 10 V
0.5 GS
2. ID = 7.0 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
102
101
100
10-1
100
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by RDS(on)
100 µs
1 ms
10 ms
DC
10 µs
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
VDS , Drain-Source Voltage [V]
102
Fig 10. Max. Drain Current vs. Case Temperature
15
12
9
6
3
0
25 50 75 100 125 150
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
D=0.5
100
0.2
0.1
0.05
10- 1 0.02
0.01
single pulse
@ Notes :
1. Z (t)=3.08 o C/W Max.
θJ C
2. Duty Factor, D=t1 /t2
3. TJ M-TC =PD M *ZθJ C (t)
PDM
t1
t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
101

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N-CHANNEL
POWER MOSFET
IRFR/U130A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (I G) Current Sampling (I D)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time