U2893B.pdf 데이터시트 (총 14 페이지) - 파일 다운로드 U2893B 데이타시트 다운로드

No Preview Available !

U2893B
Modulation PLL for GSM, DCS and PCS Systems
Description
The U2893B is a monolithic integrated circuit. It is
realized using TEMIC’s advanced silicon bipolar UHF5S
technology. The device integrates a mixer, an I/Q modu-
lator, a phase-frequency detector (PFD) with two
synchronous-programmable dividers, and a charge pump.
The U2893B is designed for cellular phones such as GSM,
DCS1800, and PCS1900, applying a transmitter-archi-
tecture where the VCO is operated at the TX output
frequency.
U2893B exhibits low power consumption, and the power-
down function extends battery life.
The IC is available in a shrinked small-outline 28–pin
package (SSO28).
Features
D Supply voltage down to 2.7 V
D Current consumption 40 mA
D Power-down function
D Low-current standby mode
D High-speed PFD and charge pump
D Integrated dividers
Benefits
D High-level RF integration
D TX architecture saves filter costs
D Low external part count
D Small SSO28 package
D One device for various applications
Block Diagram
MDLO
I NI
Q NQ
PUMIX
PU MIXO MIXLO
MDO
NMDO
ND
NND
RD
NRD
MC
90
grd
+
I/Q modulator
Voltage
reference
Mixer
N:1
divider
R:1
divider
Mode
control
MUX
PFD
GND
CPC GNDP
Figure 1. Block diagram
RF
NRF
VSP
CPO
VS1
VS2
VS3
12494
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-97
Preliminary Information
1 (14)

No Preview Available !

U2893B
Pin Description
I1
28 Q
NI 2
27 NQ
MDLO 3
26 VS3
GND 4
25 MIXO
MDO 5
NMDO 6
24 GND
23 NRF
VS1 7
22 RF
VSP 8
21 VS2
CPO 9
GNDP 10
20 MIXLO
19 PU
CPC 11
18 GND
PUMIX 12
17 NND
RD 13
16 ND
NRD 14
15 MC
12495
Figure 2. Pinning
Pin Symbol
Function
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ1 I In-phase baseband input
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ2 NI Complementary to I
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ3 MDLO I/Q-modulator LO input
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ4 GND 1) Negative supply
5 MDO I/Q-modulator output
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ6 NMDO Complementary to MDO
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ7 VS1 3) Positive supply (I/Q MOD)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ8 VSP Pos. supply charge-pump
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ9 CPO Charge-pump output
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ10 GNDP 2) Neg. supply charge pump
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ11 CPC Charge-pump current control
(input)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ12 PUMIX Power-up, mixer only
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ13 RD R-divider input
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ14 NRD Complementary to RD
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ15 MC Mode control
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ16 ND N-divider input
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ17 NND Complementary to ND
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ18 GND 1) Negative supply
19 PU Power-up, whole chip except
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁmixer
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ20 MIXLO Mixer LO input
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ21 VS2 3) Positive supply (MISC.)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ22 RF Mixer RF-input
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ23 NRF Complementary to RF
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ24 GND 1) Negative supply
25 MIXO Mixer output
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ26 VS3 3) Positive supply (mixer)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ27 NQ Complementary to Q
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ28 Q Quad.-phase baseband input
1) All GND pins must be connected to GND
potential. No DC voltage between GND pins!
v2) Max. voltage between GNDP and GND pins
200 mV
3) The maximum permissible voltage difference
between pins VS1, VS2 and VS3 is 200 mV.
2 (14)
TELEFUNKEN Semiconductors
Preliminary Information
Rev. A1, 29-Jan-76

No Preview Available !

U2893B
Absolute Maximum Ratings
Parameters
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply voltage VS1, VS2, VS3
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply voltage charge pump VSP
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁVoltage at any input
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁCurrent at any input / output pin
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁexcept CPC
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁCPC output currents
Ambient temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁStorage temperature
Symbol
VVS#
VVSP
VVi#
| II# | | IO# |
| ICPC |
Tamb
Tstg
vValue
VVSP
v v5.5
–0.5 VVS +0.5 5.5
2
5
–20 to +85
–40 to +125
Unit
V
V
V
mA
mA
°C
°C
Operating Range
Parameters
Supply voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁAmbient temperature
Symbol
VVS#, VVSP
Tamb
Value
2.7 to 5.5
–20 to +85
Unit
V
°C
Thermal Resistance
ÁÁJÁÁunctÁÁionÁÁambÁÁienPÁÁtarSaSmÁÁOe2te8ÁÁrs ÁÁÁÁÁÁÁÁÁÁÁÁÁÁSRyÁÁmthJbAÁÁol ÁÁÁÁÁÁÁÁÁÁÁÁV1aÁÁ3lu0eÁÁÁÁÁÁÁÁÁÁKU/nWÁÁit ÁÁ
Electrical Characteristics: General Data
Tamb = 25°C, VS = 2.7 to 5.5 V
Parameters
Test Conditions / Pin
Symbol
Min. Typ. Max. Unit
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDC supply
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply voltages VS#
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply voltage VSP
VVS1 = VVS2 = VVS3
VVS#
VVSP
2.7
VVS#
– 0.3
5.5 V
5.5 V
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply current IVS1
Active (VPU = VS)
Standby (VPU = 0)
IVS1A
IVS1Y
16 mA
20 mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply current IVS2
Active (VPU = VS)
Standby (VPU = 0)
IVS2A
IVS2Y
21 mA
20 mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply current IVS3
Active (VPUMIX = VS)
Standby (VPUMIX = 0)
IVS3A
IVS3Y
11 mA
30 mA
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSupply current IVSP 1)
Active
(VPU = VS, CPO open)
Standby (VPU = 0)
IVSPA
IVSPY
2) 20 mA
20 mA
N & R divider inputs ND, NND & RD, NRD
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁN:1 divider frequency
W50- source
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁR:1 divider frequency
W50- source
FND 100
FRD 100
650 MHz
400 MHz
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁInput impedance
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁInput sensitivity
Active & standby
W50- source
ZRD, ZND
VRDeff, VNDeff
1 k
30
2 pF –
200 mV
1) 100-MHz PFD operation, pump current set to 4 mA, zero phase difference (steady state)
2) See chapter “Supply Current of the Charge Pump i(VSP) vs. Time”, page 6.
TELEFUNKEN Semiconductors
Rev. A1, 29-Jan-97
Preliminary Information
3 (14)