U309.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 U309 데이타시트 다운로드

No Preview Available !

N-Channel JFET
High Frequency Amplifier
CORPORATION
U308 – U310
FEATURES
High Power Gain
Low Noise
Dynamic Range Greater The 100dB
•• Easily Matched to 75Input
PIN CONFIGURATION
(TO-52)
5021
G, C
D
S
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part Package
U308-10 Hermetic TO-52
XU308-10 Sorted Chips in Carriers
Temperature Range
-55oC to +150oC
-55oC to +150oC
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
U308
U309
U310
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
IGSS Gate Reverse Current
-150
-150
-150
-150
-150 pA VGS = -15V
-150 nA VGS = 0
TA = 125oC
BVGSS
VGS(off)
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
-25
-1.0
-25
-6.0 -1.0
-25
-4.0 -2.5
IG = -1µA, VDS = 0
V
-6.0 VDS = 10V, ID = 1nA
IDSS
Saturation Drain Current (Note 1)
12
60 12
30 24
60 mA VDS = 10V, VGS = 0
VGS(f)
Gate-Source Forward Voltage
1.0 1.0 1.0 V IG = 10mA, VDS = 0
gfg
Common-Gate Forward
Transconductance (Note 1)
10 17
10 17
10 17
mS
VDS = 10V,
ID = 10mA
f = 1kHz
gogs Common Gate Output Conductance 250 250 250 µS
Cgd Drain-Gate Capacitance
Cgs Gate-Source Capacitance
2.5
5.0
2.5
5.0
2.5
5.0
pF
VGS = -10V, f = 1MHz
VDS = 10V (Note 2)
en
Equivalent Short Circuit
Input Noise Voltage
10
10
10
nV VDS = 10V, f = 100Hz
√Hz ID = 10mA (Note 2)

No Preview Available !

CORPORATION
U308 – U310
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL
PARAMETER
gfg
Common-Gate Forward
Transconductance
gogs
Common-Gate Output
Conductance
Gpg Common-Gate Power Gain
NF Noise Figure
U308
U309
U310
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
15 15 15
f = 100MHz
14
0.18
0.32
14 16
14
0.18
0.32
14 16
14
0.18
0.32
14 16
µS
VDS = 10V,
ID = 10mA
(Note 2)
f = 450MHz
f = 100MHz
f = 450MHz
f = 100MHz
10 11
10 11
10 11
1.5 2.0
1.5 2.0
1.5 2.0
dB
f = 450MHz
f = 100MHz
2.7 3.5
2.7 3.5
2.7 3.5
f = 450MHz
NOTES: 1. Pulse test duration = 2ms.
2. For design reference only, not 100% tested.