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Supertex inc.
TP2104
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Analog switches
Power management
Telecom switches
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-
proven, silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Part Number
Package Option
Packing
TP2104K1-G
TO-236AB (SOT-23)
TP2104N3-G
3-Lead TO-92
TP2104N3-G P002
TP2104N3-G P003
TP2104N3-G P005 3-Lead TO-92
TP2104N3-G P013
TP2104N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
3000/Reel
1000/Bag
2000/Reel
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-236AB (SOT-23)
203OC/W
TO-92
132OC/W
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
-40V
6.0Ω
Pin Configuration
VGS(th)
(max)
-2.0V
DRAIN
SOURCE
GATE
TO-236AB (SOT-23)
SOURCE
DRAIN
GATE
TO-92
Product Marking
P1LW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23)
SiTP YY = Year Sealed
2 1 0 4 WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Doc.# DSFP-TP2104
B081313
Supertex inc.
www.supertex.com

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Thermal Characteristics
Package
(continIDuous)
TO-236AB (SOT-23)
-160mA
TO-92
-175mA
† ID (continuous) is limited by max rated Tj .
ID
(pulsed)
-800mA
-1.0A
Power Dissipation
@TA = 25OC
0.36W
0.74W
IDR
-160mA
-175mA
TP2104
IDRM
-800mA
-1.0A
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ Max
Units Conditions
BVDSS Drain-to-source breakdown voltage
-40 -
-
V VGS = 0V, ID = -1.0mA
VGS(th) Gate threshold voltage
-1.0 - -2.0
V VGS = VDS, ID= -1.0mA
∆VGS(th) Change in VGS(th) with temperature
- 5.8 6.5 mV/OC VGS = VDS, ID= -1.0mA
IGSS Gate body leakage
- -1.0 -100 nA VGS = ± 20V, VDS = 0V
IDSS Zero gate voltage drain current
- -10
μA VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
-0.6 -
-
A VGS = -10V, VDS = -25V
RDS(ON)
Static drain-to-source on-state
resistance
- - 10 Ω VGS = -4.5V, ID = -50mA
- 6.0
VGS = -10V, ID = -500mA
∆RDS(ON) Change in RDS(ON) with temperature
- 0.55 1.0 %/OC VGS = -10V, ID = -500mA
GFS Forward transconductance
150 200 - mmho VDS = -25V, ID = -500mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- 35 60
- 22 30
- 8.0 10
VGS = 0V,
pF VDS = -25V,
f = 1.0 MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 4.0 6.0
- 4.0 8.0
- 5.0 9.0
- 5.0 8.0
VDD = -25V,
ns ID = -500mA,
RGEN = 25Ω
VSD Diode forward voltage drop
- -1.2 -2.0
V VGS = 0V, ISD = -500mA
trr Reverse recovery time
- 400 -
ns VGS = 0V, ISD = -500mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
t(ON)
90%
t(OFF)
td(ON)
tr
td(OFF)
tf
0V
OUTPUT
VDD
10%
90%
90%
10%
Doc.# DSFP-TP2104
B081313
2
Pulse
Generator
RGEN
INPUT
D.U.T.
OUTPUT
RL
VDD
Supertex inc.
www.supertex.com

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Typical Performance Curves
BVDSS Variation with Temperature
1.1
1.0
0.9
-50
0 50 100 150
Tj (OC)
Transfer Characteristics
-2.0
VDS = -25OC
-1.6
TA = -55OC
-1.2
-0.8 25OC
125OC
-0.4
0 0 -2.0 -4.0 -6.0 -8.0 10
VGS (volts)
Capacitance vs. Drain-to-Source Voltage
100
f = 1.0MHz
75
50
25
00
CISS
COSS
CRSS
-10 -20
-30
VDS (volts)
-40
TP2104
On-Resistance vs. Drain Current
20
16 VGS = -4.5V
12
VGS = -10V
8.0
4.0
0 0 -0.4 -0.6 -0.8 -1.2 -2.0
ID (amperes)
VGS(th) and RDS(ON) Variation with Temperature
1.2
1.6
RDS(ON) @ -10V, -0.5A
1.1
1.4
1.0
VGS(th) @ -1.0mA
1.2
0.9
1.0
0.8
0.8
0.7
-50
0 50 100 150
Tj (OC)
Gate Drive Dynamic Characteristics
-10
VDS = -10V
-8.0
-6.0
-4.0
-2.0
00
VDS = -40V
125 pF
35 pF
0.5 1.0 1.5 2.0
QG (nanocoulombs)
2.5
Doc.# DSFP-TP2104
B081313
Supertex inc.
3 www.supertex.com

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Typical Performance Curves (cont.)
Output Characteristics
-2.0
VGS = -10V
-1.6
-1.2 -8V
-0.8
-0.4
0
0
-6V
-4V
-3V
-10 -20 -30 -40 -50
VDS (volts)
Transconductance vs. Drain Current
0.5
VDS = -25V
0.4
TA = -55OC
0.3
25OC
0.2
125OC
0.1
0
0 -0.2 -0.4 -0.6 -0.8 -1.0
ID (amperes)
Maximum Rated Safe Operating Area
-1.0
SOT-23 (pulsed)
SOT-23 (DC)
-0.1
-0.01
TA = 25OC
-0.001
-0.1
Doc.# DSFP-TP2104
B081313
-1.0 -10
VDS (volts)
-100
TP2104
Saturation Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
0
VGS = -10V
-8V
-6V
-4V
-3V
-2.0 -4.0 -6.0 -8.0 -10
VDS (volts)
Power Dissipation vs. Temperature
1.0
0.8
TO-92
0.6
0.4
SOT-23
0.2
0
0 25 50 75 100 125 150
TA (OC)
Thermal Response Characteristics
1.0
0.8
SOT-23
0.6 PD = 0.36W
TA = 25OC
0.4
0.2
0
0.001
TO-92
PD = 1.0W
TC = 25OC
0.01 0.1
1.0
tP (seconds)
10
Supertex inc.
4 www.supertex.com

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3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
TP2104
E1 E
12
e
e1
Top View
A A2
A1
Side View
b
A
Seating
Plane
A
0.25
Gauge
Plane
L
L1
View B
Seating
Plane
View B
View A - A
Symbol
A A1 A2 b
MIN 0.89 0.01 0.88 0.30
Dimension
(mm)
NOM
-
- 0.95 -
MAX 1.12 0.10 1.02 0.50
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.
D
2.80
2.90
3.04
E
2.10
-
2.64
E1
1.20
1.30
1.40
e
0.95
BSC
e1
1.90
BSC
L
0.20
0.50
0.60
L1
0.54
REF
θ
0O
-
8O
Doc.# DSFP-TP2104
B081313
Supertex inc.
5 www.supertex.com