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Copyright © 1997, Power Innovations Limited, UK
TIC256 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
q High Current Triacs
q 20 A RMS
q Glass Passivated Wafer
q 400 V to 800 V Off-State Voltage
q 150 A Peak Current
q Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
TIC256D
TIC256M
TIC256S
TIC256N
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
VALUE
400
600
700
800
20
150
±1
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at
the rate of 500 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current
VD = Rated VDRM
IG = 0
TC = 110°C
±2 mA
IGTM
VGTM
VTM
IH
Peak gate trigger
current
Peak gate trigger
voltage
Peak on-state voltage
Holding current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
ITM = ±28.2 A
Vsupply = +12 V†
Vsupply = -12 V†
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
IG = 50 mA
IG = 0
IG = 0
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
(see Note 4)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
7
-15
-16
28
0.7
-0.7
-0.8
0.8
±1.4
6
-13
50
-50
-50
2
-2
-2
2
±1.7
40
-40
mA
V
V
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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TIC256 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IL
dv/dt
Latching current
Critical rate of rise of
off-state voltage
Vsupply = +12 V†
Vsupply = -12 V†
VD = Rated VD
(see Note 5)
IG = 0
TC = 110°C
20
-20
±450
mA
V/µs
dv/dt(c)
di/dt
Critical rise of
commutation voltage
Critical rate of rise of
on -state current
VD = Rated VD
di/dt = 0.5 IT(RMS)/ms
VD = Rated VD
diG/dt = 50 mA/µs
IGT = 50 mA
TC = 80°C
IT = 1.4 IT(RMS)
TC = 110°C
±1
±200
V/µs
A/µs
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 , tp(g) = 20 µs, tr = 15 ns, f = 1 kHz.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.9 °C/W
62.5 °C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
1000
CASE TEMPERATURE
TC10AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC10AB
0·1
100
ALL QUADRANTS
10 0·01
1 Vsupply IGTM
++
+-
--
-+
0·1
-60 -40 -20
0
VAA = ± 12 V
RL = 10
tp(g) = 20 µs
20 40 60 80 100 120
TC - Case Temperature - °C
Figure 1.
VAA = ± 12 V
RL = 10
tp(g) = 20 µs
0·001
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 2.
PRODUCT INFORMATION
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TYPICAL CHARACTERISTICS
TIC256 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
HOLDING CURRENT
vs
CASE TEMPERATURE
TC10AD
100
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
TC10AC
10
MAX
TYP
10 1 MIN
1 0·1
Vsupply
+
-
0·1
-60 -40 -20
0
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
20 40 60 80 100 120
TC - Case Temperature - °C
Figure 3.
QUADRANT 1
0·01
0·001
0·01
0·1
IA = 0
TC = 25 °C
1
IGF - Gate Forward Current - A
Figure 4.
10
LATCHING CURRENT
vs
1000
CASE TEMPERATURE
TC10AE
100
10
1
-60
Vsupply IGTM
++
+-
--
-+
VAA = ± 12 V
-40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 5.
PRODUCT INFORMATION
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TIC256 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
ø
3,96
3,71
see Note B
10,4
10,0
2,95
2,54
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
0,97
0,61
123
1,70
1,07
2,74
2,34
5,28
4,88
14,1
12,7
0,64
0,41
2,90
2,40
VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
VERSION 2
PRODUCT INFORMATION
4
MDXXBE

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TIC256 SERIES
SILICON TRIACS
JULY 1991 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
5