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TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,
TISP4240M3LM THRU TISP4400M3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
NOVEMBER 1997 - REVISED APRIL 1999
TELECOMMUNICATION SYSTEM MEDIUM CURRENT OVERVOLTAGE PROTECTORS
q 4 kV 10/700, 100 A 5/310 ITU-T K20/21 rating
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
VDRM
V
58
65
75
100
120
135
145
160
180
200
230
275
300
V(BO)
V
70
80
95
125
145
165
180
220
240
260
300
350
400
T(A)
NC
R(B)
LM PACKAGE
(TOP VIEW)
1
2
3
NC - No internal connection on pin 2
MD4XAT
LMF PACKAGE
(LM PACKAGE WITH FORMED LEADS)
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
NC - No internal connection on pin 2
MD4XAKB
device symbol
T
q Rated for International Surge Wave Shapes
WAVE SHAPE
STANDARD
ITSP
A
2/10 µs
8/20 µs
GR-1089-CORE
IEC 61000-4-5
300
220
R SD4XAA
10/160 µs
10/700 µs
FCC Part 68
ITU-T K20/21
FCC Part 68
120
100
Terminals T and R correspond to the
alternative line designators of A and B
10/560 µs
10/1000 µs
FCC Part 68
GR-1089-CORE
75
50
q Ordering Information
q Low Differential Capacitance . . . 43 pF max.
DEVICE TYPE
TISP4xxxM3LM
PACKAGE TYPE
Straight Lead DO-92 Bulk Pack
TISP4xxxM3LMR Straight Lead DO-92 Tape and Reeled
TISP4xxxM3LMFR Formed Lead DO-92 Tape and Reeled
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,
TISP4240M3LM THRU TISP4400M3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
description (continued)
This TISP4xxxM3LM range consists of thirteen voltage variants to meet various maximum system voltage
levels (58 V to 300 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package.
The TISP4xxxM3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxM3LMF is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings, TA = 25°C (unless otherwise noted)
RATING
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
Repetitive peak off-state voltage, (see Note 1)
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A
Junction temperature
Storage temperature range
SYMBOL
VDRM
ITSP
ITSM
diT/dt
TJ
Tstg
VALUE
± 58
± 65
± 75
±100
±120
±135
±145
±160
±180
±200
±230
±275
±300
UNIT
V
300
220
120
110
100 A
100
100
100
75
50
30
32
2.1
300
-40 to +150
-65 to +150
A
A/µs
°C
°C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially the TISP4xxxM3LM must be in thermal equilibrium with TJ = 25°C.
3. The surge may be repeated after the TISP4xxxM3LM returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
PRODUCT INFORMATION
2

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TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,
TISP4240M3LM THRU TISP4400M3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
electrical characteristics for the T and R terminals, TA = 25°C (unless otherwise noted)
IDRM
PARAMETER
Repetitive peak off-
state current
V(BO) Breakover voltage
Impulse breakover
V(BO) voltage
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Coff Off-state capacitance
VD = ±VDRM
TEST CONDITIONS
dv/dt = ±750 V/ms, RSOURCE = 300
dv/dt ±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
dv/dt = ±750 V/ms, RSOURCE = 300
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = +/-30 mA/ms
MIN
TA = 25°C
TA = 85°C
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
±0.15
±0.15
Linear voltage ramp, Maximum ramp value < 0.85VDRM
±5
VD = ±50 V
f = 100 kHz, Vd = 1 V rms, VD = 0,
f = 100 kHz, Vd = 1 V rms, VD = -1 V
f = 100 kHz, Vd = 1 V rms, VD = -2 V
f = 100 kHz, Vd = 1 V rms, VD = -50 V
f = 100 kHz, Vd = 1 V rms, VD = -100 V
(see Note 6)
TA = 85°C
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
‘4125 thru ‘4220
‘4240 thru ‘4400
TYP
86
60
54
80
56
50
74
52
46
36
26
20
20
16
MAX
±5
±10
±70
±80
±95
±125
±145
±165
±180
±220
±240
±260
±300
±350
±400
±78
±88
±102
±132
±151
±171
±186
±227
±247
±267
±308
±359
±410
±0.6
±3
±0.6
±10
110
80
70
96
74
64
90
70
60
47
36
30
30
24
UNIT
µA
V
V
A
V
A
kV/µs
µA
pF
NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V.
PRODUCT INFORMATION
3

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TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,
TISP4240M3LM THRU TISP4400M3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
MIN TYP MAX UNIT
120
°C/W
57
NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PARAMETER MEASUREMENT INFORMATION
+i
ITSP
ITSM
IT
IH
VT
Quadrant I
Switching
Characteristic
V(BO)
I(BO)
VDRM
-v
IDRM
VD ID
ID VD
VDRM
IDRM
+v
I(BO)
V(BO)
IH
VT
IT
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT INFORMATION
4

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TISP4070M3LM THRU TISP4095M3LM, TISP4125M3LM THRU TISP4220M3LM,
TISP4240M3LM THRU TISP4400M3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
VD = ±50 V
TCMAG
10
1
NORMALISED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4MAF
1.10
1.05
0·1
0·01
0·001
-25
0 25 50 75 100
TJ - Junction Temperature - °C
Figure 2.
125
150
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
70 TA = 25 °C
50 tW = 100 µs
40
30
20
15
10
7
5
4
3
2
1.5
1
0.7
'4125
THRU
'4220
'4240
THRU
'4400
'4070
THRU
'4095
1 1.5 2
3 45
VT - On-State Voltage - V
Figure 4.
TC4MAJ
7 10
1.00
0.95
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 3.
150
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4MAD
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 5.
150
PRODUCT INFORMATION
5