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TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
DECEMBER 1998 - REVISED APRIL 1999
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
VDRM
V
58
66
100
120
145
180
200
220
240
270
V(BO)
V
72
82
125
150
180
240
260
290
320
380
q Rated for International Surge Wave Shapes
T(A)
NC
R(B)
LM PACKAGE
(TOP VIEW)
1
2
3
NC - No internal connection on pin 2
LMF PACKAGE
(LM PACKAGE WITH FORMED LEADS)
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
NC - No internal connection on pin 2
WAVE SHAPE
10/160 µs
0.5/700 µs
10/700 µs
10/560 µs
10/1000 µs
STANDARD
FCC Part 68
I3124
ITU-T K20/21
FCC Part 68
REA PE-60
ITSP
A
60
38
50
45
35
device symbol
T
q Ordering Information
DEVICE TYPE
PACKAGE TYPE
TISP4xxxF3LM Straight Lead DO-92 Bulk Pack
TISP4xxxF3LMR Straight Lead DO-92 Tape and Reeled
TISP4xxxF3LMFR Formed Lead DO-92 Tape and Reeled
R SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
MD4XAT
MD4XAKB
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels
(58 V to 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package. The
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
description (continued)
TISP4xxxF3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The TISP4xxxF3LMF
is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings
RATING
Repetitive peak off-state voltage (0 °C < TJ < 70 °C)
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) excluding ‘4072 - ‘4082
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) excluding ‘4072 - ‘4082
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 2 kV, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 1.5 kV, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 1.5 kV, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 2 kV, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (REA PE-60, 10/1000 µs voltage wave shape)
2/10 µs (FCC Part 68, 2/10 µs voltage wave shape) ‘4072 - ‘4082 only
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape) ‘4072 - ‘4082 only
Non-repetitive peak on-state current (see Notes 2 and 3)
50/60 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
SYMBOL
VDRM
ITSP
ITSM
diT/dt
TJ
Tstg
VALUE
± 58
± 66
± 100
± 120
± 145
± 180
± 200
± 220
± 240
± 270
UNIT
V
175
120
60
50
38
38
50
45
35
80
70
4
250
-40 to +150
-55 to +150
A
A
A/µs
°C
°C
NOTES: 1. Initially the TISP must be in thermal equilibrium with 0 °C < TJ < 70 °C.
2. The surge may be repeated after the TISP returns to its initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
PRODUCT INFORMATION
2

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TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
electrical characteristics for the T and R terminals, TJ = 25 °C (unless otherwise noted)
IDRM
PARAMETER
Repetitive peak off-
state current
V(BO) Breakover voltage
Impulse breakover
V(BO) voltage
I(BO)
VT
IH
dv/dt
ID
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Coff Off-state capacitance
TEST CONDITIONS
MIN TYP
VD = ±VDRM, 0 °C < TJ < 70 °C
dv/dt = ±250 V/ms, RSOURCE = 300
dv/dt = ±1000 V/µs, RSOURCE = 50 Ω,
di/dt < 20 A/µs
dv/dt = ±250 V/ms, RSOURCE = 300
IT = ±5 A, tW = 100 µs
IT = ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
f = 100 kHz, Vd = 1 Vrms, VD = 0,
f = 100 kHz, Vd = 1 Vrms, VD = -50 V
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
±0.15
±0.15
±5
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
‘4072 - ‘4082
‘4125 - ‘4180
‘4240 - ‘4380
63
43
44
25
15
11
MAX
±10
±72
±82
±125
±150
±180
±240
±260
±290
±320
±380
±86
±96
±143
±168
±198
±267
±287
±317
±347
±407
±0.6
±3
±10
108
74
74
40
25
20
UNIT
µA
V
V
A
V
A
kV/µs
µA
pF
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
TEST CONDITIONS
EIA/JESD51-3 PCB mounted in an EIA/
JESD51-2 enclosure
MIN TYP MAX UNIT
120 °C/W
PRODUCT INFORMATION
3

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TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
PARAMETER MEASUREMENT INFORMATION
+i
ITSP
Quadrant I
Switching
Characteristic
ITSM
IT
IH
VT
V(BO)
I(BO)
VDRM
-v
VD
IDRM
ID
ID
IDRM
VD VDRM
+v
I(BO)
V(BO)
IH
VT
IT
ITSM
Quadrant III
Switching
Characteristic
ITSP
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR R AND T TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE T TERMINAL
PRODUCT INFORMATION
4

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TISP4072F3LM, TISP4082F3LM, TISP4125F3LM, TISP4150F3LM, TISP4180F3LM
TISP4240F3LM, TISP4260F3LM, TISP4290F3LM, TISP4320F3LM, TISP4380F3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
DECEMBER 1998 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC4XAA
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
1.00
TC4XAB
10
1
0·1
0·01
VD = 50 V
VD = -50 V
0·001
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 2.
150
NOONR-SMTAALTIESECDURVR(BEO)NT
vsvs
100 AMBOIENN-STTTAETMEPVEORLATTAUGREE TTCC43XMAACL
'4072
'4125
AND
1.1 THRU '4082
'4180
10 '4240
THRU
1.0 '4380
'4240
THRU
'4380
25°C
'145007°2C
AND
-40°C
0.91 '4082
1 -25
0 225 503 754 1500 6 1725 8 915100
TA -VATm- bOienn-St tTaetemVpoerltaatguere--V°C
Figure 4.
0.99 '4125
THRU
'4072 '4180
0.98 AND
'4082
0.97
0.96
0.95
-40
'4240
THRU
'4380
-35 -30 -25 -20 -15 -10 -5
TAMIN - Minimum Ambient Temperature - °C
Figure 3.
0
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4XAD
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0 25 50 75 100
TJ - Junction Temperature - °C
Figure 5.
125
150
PRODUCT INFORMATION
5