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TO-220F 5A High sensitive Thyristor
TF541S-A,TF561S-A
s Features
qRepetitive peak off-state voltage: VDRM=400, 600V
qAverage on-state current: IT(AV)=5A
qHigh sensitive Gate trigger current: IGT=0.2mA max
qIsolation voltage: VISO=1500V (50Hz Sine wave, RMS )
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
VDRM
VRRM
VDSM
VRSM
IT(AV)
IT(RMS)
ITSM
IFGM
VFGM
VRGM
PGM
PG (AV)
Tj
Tstg
VISO
Ratings
TF541S-A
TF561S-A
400 600
400 600
500 700
500 700
5.0
7.8
80
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
1500
External Dimensions
(Unit: mm)
φ3.3±0.2 10.0±0.2
4.2±0.2
2.8 C 0.5
a
b
1.35±0.15
1.35±0.15
0.85 +– 00..12
2.54
2.54 0.45 +–00..12
2.4±0.2
2.2±0.2
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
V
Conditions
Tj= – 40 to +125°C, RGK =470
50Hz Half-cycle sinewave, Continuous current, Tc=88°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f 50Hz, duty 10%
f 50Hz
f 50Hz, duty 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Symbol
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
IDRM
IRRM
VTM
VGT
IGT
VGD
IH
dv/dt
tq
Rth
min
0.1
Ratings
typ
0.03
4.0
20
30
max
2.0
2.0
1.4
1.5
0.2
4.0
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/ W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1k
TC=25°C, ITM=10A
VD=6V, RL=10, TC=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k
RGK=1k, Tj=25°C
VD=1/2 × VDRM, Tj=125°C, RGK=1k, CGK=0.033µF
Tc=25°C
Junction to case
20