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SN 7002
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Pin 1
G
Pin 2
S
Pin 3
D
Type
SN 7002
Type
SN 7002
VDS
60 V
ID
0.19 A
Ordering Code
Q67000-S063
RDS(on)
5
Package
SOT-23
Tape and Reel Information
E6327
Marking
sSG
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
60
60
± 14
± 20
0.19
0.76
0.36
Unit
V
A
W
Semiconductor Group
1
Sep-13-1996

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SN 7002
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip to ambient air
RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Values
Unit
-55 ... + 150 °C
-55 ... + 150
350
K/W
285
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
60 -
-
Gate threshold voltage
VGS(th)
VGS=VDS, ID = 1 mA
0.8 1.4 2
Zero gate voltage drain current
IDSS
VDS = 60 V, VGS = 0 V, Tj = 25 °C
- 0.1 1
VDS = 60 V, VGS = 0 V, Tj = 125 °C
--
5
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
- 1 10
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.5 A
- 25
VGS = 4.5 V, ID = 0.05 A
- 3 7.5
Unit
V
µA
nA
Semiconductor Group
2
Sep-13-1996

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SN 7002
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 0.2 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.29 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
0.1
-
-
-
-
-
-
-
0.2 -
60 80
15 25
15 25
58
58
12 16
13 17
Unit
S
pF
ns
Semiconductor Group
3
Sep-13-1996

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SN 7002
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current IS
TA = 25 °C
Inverse diode direct current,pulsed
ISM
TA = 25 °C
Inverse diode forward voltage
VSD
VGS = 0 V, IF = 0.5 A, Tj = 25 °C
-
-
-
- 0.19
- 0.76
1 1.2
Unit
A
V
Semiconductor Group
4
Sep-13-1996

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SN 7002
Power dissipation
Ptot = ƒ(TA)
0.40
W
Ptot 0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0
20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Drain current
ID = ƒ(TA)
parameter: VGS 10 V
0.20
A
ID 0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
20 40 60 80 100 120 °C 160
TA
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Semiconductor Group
71
V
68
V
(BR)DSS
66
64
62
60
58
56
54
-60 -20 20 60 100 °C 160
Tj
5 Sep-13-1996