SN7002W.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 SN7002W 데이타시트 다운로드

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SIPMOS® Small-Signal-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
dv/dt rated
Qualified according to AEC Q101
Halogen-free according to IEC61249-2-21
SN7002W
Product Summary
VDS 60 V
RDS(on) 5
ID 0.23 A
PG-SOT-323
Gate
pin1
Drain
pin 3
Source
pin 2
Type
SN7002W
SN7002W
Package
PG-SOT-323
PG-SOT-323
Pb-free
Yes
Yes
Tape and Reel Information
H6327: 3000 pcs/reel
H6433: 10000 pcs/reel
Marking
sSN
sSN
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
ID puls
TA=25°C
Reverse diode dv/dt
dv/dt
IS=0.23A, VDS=48V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD class (JESD22-A114-HBM)
VGS
Power dissipation
TA=25°C
Operating and storage temperature
Ptot
Tj , Tstg
IEC climatic category; DIN IEC 68-1
Value
0.23
0.18
0.92
6
±20
0 (<250V)
0.5
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 2.5
Page 1
2011-07-13

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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
at minimal footprint
SN7002W
Symbol
Values
Unit
min. typ. max.
RthJS
- - 250 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
Gate threshold voltage, VGS = VDS
V(BR)DSS 60
-
-V
VGS(th) 0.8 1.4 1.8
ID=26µA
Zero gate voltage drain current
VDS=60V, VGS=0, Tj=25°C
VDS=60V, VGS=0, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
IDSS
IGSS
µA
- - 0.1
- -5
- - 10 nA
RDS(on) - 4.1 7.5
VGS=4.5V, ID=0.2A
Drain-source on-state resistance
RDS(on) - 2.3 5
VGS=10V, ID=0.23A
Rev. 2.5
Page 2
2011-07-13

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SN7002W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
gfs
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS2*ID*RDS(on)max,
ID=0.18A
VGS=0, VDS=25V,
f=1MHz
VDD=30V, VGS=10V,
ID=0.23A, RG=6
0.1 0.21 - S
- 34 45 pF
- 7.2 9.6
- 3 4.5
- 2.4 3.6 ns
- 2.8 4.2
-69
- 8.5 12.75
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=48V, ID=0.23A
VDD=48V, ID=0.23A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=48V, ID = 0.23 A
- 0.11 0.17 nC
- 0.42 0.63
- 1 1.5
- 3.4 - V
Reverse Diode
Inverse diode continuous
forward current
IS
TA=25°C
- - 0.23 A
Inv. diode direct current, pulsedISM
Inverse diode forward voltage VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
VGS=0, IF=0.23A
VR=30V, IF=lS,
diF/dt=100A/µs
- - 0.92
- 0.85 1.2 V
- 10.8 16.2 ns
- 3.2 4.8 nC
Rev. 2.5
Page 3
2011-07-13

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1 Power dissipation
Ptot = f (TA)
SN7002W
0.55
W
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0 20 40 60 80 100 120 °C 160
TA
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
10 1 SN7002W
A
10 0
10 -1
/ID
= V DS
R DS(on)
tp = 25.0µs
100 µs
1 ms
10 ms
10 -2
DC
SN7002W
2 Drain current
ID = f (TA)
parameter: VGS10 V
0.26 SN7002W
A
0.22
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0 20 40 60 80 100 120 °C 160
TA
4 Transient thermal impedance
ZthJA = f (tp)
parameter : D = tp/T
10 3 SN7002W
K/W
10 2
10 1
10 0
10 -1
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
0
Rev. 2.5
10 1 V 10 2
VDS
10
-2
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Page 4
2011-07-13

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5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.6
A
0.4
0.3
10
7V
6V
5V
4.5V
4V
3.7V
3.5V
3.0V
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.5
A
SN7002W
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
7.5
3.1V
3.5V
3.7V
6
4.1V
4.5V
5V
5.25 6V
7V
4.5 10V
3.75
3
2.25
1.5
0.75
0
0 0.1 0.2 0.3 0.4 0.5 A 0.7
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.3
S
0.2
0.3
0.15
0.2
0.1
0.1
0.05
0
0 0.5 1 1.5 2 2.5 3 3.5 V 4.5
VGS
0
0 0.1 0.2 0.3 0.4 A 0.6
ID
Rev. 2.5
Page 5
2011-07-13