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PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.7 dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP Plastic Package
Ordering Information
Type
Package
Shipping
Method
PA2423MB
8 - MSOP
Tape and reel
Tubes -samples
PA2423MB-EV Evaluation kit
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423MB is designed
for class 1 Bluetoothtm 2.4 GHz radio
applications. It delivers +22.7 dBm output power
with 45% power-added efficiency – making it
capable of overcoming insertion losses of up to
2.7 dB between amplifier output and antenna
input in class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB overshoot, meeting the Bluetoothtm
specification 1.1.
The PA2423MB operates at 3.3V DC. At typical
output power level (+22.7 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423MB – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Functional Block Diagram
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC# 05PDS001 Rev 9
07/26/2001
Page 1 of 10

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Pin Out Diagram – top view
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
VCTL
VRAMP
1 Die
2 Pad
NC 3
IN 4
8 OUT/VCC2
7 NC
6 VCC1
5 VCC0
Ground
Pin Out Description
Pin No.
1
2
3
4
5
6
7
8
Die Pad
Name
VCTL
VRAMP
NC
IN
VCCO
VCC1
NC
OUT/VCC2
GND
Description
Controls the output level of the power amplifier. An analog control signal between
0V and Vcc varies the PA output power between minimum and maximum values
Enable/Disable the power amplifier. A digital control signal with Vcc logic high
(power up) and 0V logic low (power down) is used to turn the device on and off.
No connection
Power amplifier RF input, external input matching network with DC blocking is
required
Bias supply voltage
Stage 1 collector supply voltage, external inter-stage matching network is required
No connection
PA Output and Stage2 collector supply voltage, external output matching network
with DC blocking is required
Heatslug Die Pad is ground
DOC# 05PDS001 Rev 9
07/26/2001
Page 2 of 10

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PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Absolute Maximum Ratings
Symbol
VCC
VCTL
VRAMP
IN
TA
TSTG
Tj
Parameter
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-0.3
-40
-40
Max.
+3.6
VCC
VCC
+8
+85
+150
+150
Unit
V
V
V
dBm
°C
°C
°C
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz,
Input and Output externally matched to 50Ω ,unless otherwise noted.
Symbol
VCC
ICC
ICCtemp
VCTL
ICTL
VRAMP
Istby
Note
Parameter
Supply Voltage
1 Supply Current (ICC = IVCC0 + IVCC1 +I VCC2), VCTL = 3.3V
3 Supply Current variation over temperature from TA = 25°C
(-4C <TA <+8C)
PA Output Power Control Voltage Range
1 Current sourced by VCTL Pin
3 Logic High Voltage
3 Logic Low Voltage
1 Leakage Current when Vramp = 0V, Vctl = high
Min. Typ. Max. Unit
3 3.3 3.6 V
125 150 mA
25 %
0
VCC
V
200 250 µA
2.0 V
0.8 V
0.5 10 µA
DOC# 05PDS001 Rev 9
07/26/2001
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