RB161L-40.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 RB161L-40 데이타시트 다운로드

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Diodes
Schottky barrier diode
RB161L-40
RB161L-40
zApplications
High frequency rectification
For switching power supply
zFeatures
1) Compact power mold type. (PMDS)
2) Ultra low VF.( VF=0.35V Typ. at 1A)
3) VRM=40V guaranteed.
zConstruction
Silicon epitaxial planar
zAbsolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
When mounting on PCB
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
40
20
1
70
125
40∼+125
zExternal dimensions (Units : mm)
1.5±0.2
CATHODE MARK
33
2.6±0.2
ROHM : PMDS
EIAJ :
JEDEC : SOD-106
Unit
V
V
A
A
˚C
˚C
0.1
+0.02
0.1
2.0±0.2
Date of manufacture EX. 1999.12 9, C
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max. Unit
VF − − 0.40 V IF=1.0A
IR − − 1 mA VR=20V
Conditions

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Diodes
zElectrical characteristic curves (Ta=25°C)
10 100m
1
100m
10m
10m
1m
100µ
10µ
Ta=125˚C
75˚C
25˚C
25˚C
1m
0 0.1 0.2 0.3 0.4 0.5
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
1µ
0 10 20 30 40 50
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
RB161L-40
1n
100p
10p
0 5 10 15 20 25 30 35
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
0.5
DC
D=0.8
0.4
0.3
0.2
0.1
0
0
D=0.5
sine
D=0.3
D=0.2
D=0.1
D=0.05
IF
IO
Tp
T
D=Tp / T
Tj=Tj Max.
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE RECTIFIED FORWARD CURRENT : IO (A)
Fig.4 Forward power dissipation
characteristics
0.50
0.40
0.30
0.20
VR
Tj=Tj Max.
0
Tp
T
Tj=Tj Max.
D=Tp / T
VR
D=0.05
D=0.1
D=0.2
D=0.3
D=0.5
DC
0.10
sine
D=0.8
0
0 2 4 6 8 10 12 14 16 18 20
REVERSE VOLTAGE : VR (V)
Fig.5 Reverse power dissipation
characteristics
2.0
DC
1.5 D=0.8
D=0.5
1.0 sine
D=0.3
D=0.2
0.5 D=0.1
D=0.05
IF
IO
Tp
T
D=Tp / T
VR=VRM / 2
0
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta (˚C)
Fig.6 Derating curve
(when mounting on glass
epoxy PCBs)