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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CTF, PBYR2545CTX
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IO(AV) = 20 A
VF 0.65V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2545CTF is supplied in the SOT186 package.
The PBYR2545CTX is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN DESCRIPTION
1 anode 1 (a)
case
case
2 cathode (k)
3 anode 2 (a)
tab isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR25
PBYR25
-
-
Ths 86 ˚C
square wave; δ = 0.5;
Ths 98 ˚C
square wave; δ = 0.5;
Ths 98 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
- 65
MAX.
40CTF
40CTX
40
45CTF
45CTX
45
40 45
40
20
45
UNIT
V
V
V
A
20 A
135 A
150 A
1A
150 ˚C
175 ˚C
October 1998
1
Rev 1.300

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CTF, PBYR2545CTX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol Peak isolation voltage from SOT186 package; R.H. 65%; clean and
all terminals to external
dustfree
heatsink
Visol R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H. 65%; clean
heatsink
and dustfree
Cisol Capacitance from pin 2 to f = 1 MHz
external heatsink
MIN. TYP. MAX. UNIT
- - 1500 V
- - 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance junction
to heatsink
Rth j-a
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air
MIN. TYP. MAX. UNIT
- - 4.8 K/W
- - 4 K/W
- 55 - K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF Forward voltage per diode IF = 20 A; Tj = 125˚C
IF = 20 A
IR Reverse current per diode VR = VRWM
VR = VRWM; Tj = 100˚C
Cd Junction capacitance per VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
diode
MIN.
-
-
-
-
-
TYP.
0.58
0.63
0.3
30
530
MAX. UNIT
0.65 V
0.68 V
2 mA
40 mA
- pF
October 1998
2
Rev 1.300

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CTF, PBYR2545CTX
15 Forward dissipation, PF (W)
Vo = 0.37 V
Rs = 0.014 Ohms
PBYR2545CTX
0.5
Ths(max) (C)
78
D = 1.0
0.2
10
0.1
102
5
I tp
D=
tp
T
126
Tt
0 150
0 5 10 15 20 25
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x D.
15 Forward dissipation, PF (W) PBYR2545CTX
Ths(max) (C)
78
Vo = 0.37 V
Rs = 0.014 Ohms
a = 1.57
2.2 1.9
10 2.8 102
4
5 126
0 150
0 5 10 15
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
50 Forward current, IF (A)
Tj = 25 C
Tj = 125 C
40
PBYR2545CTX
30
typ
20
max
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100 Reverse current, IR (mA)
PBYR3045WT
125 C
10
100 C
75 C
1
50 C
0.1
Tj = 25 C
0.01
0
25
Reverse voltage, VR (V)
50
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd / pF
10000
PBYR2545CT
1000
100
1
10 100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-hs (K/W)
1
0.1
PD tp
D=
tp
T
0.01
1us
10us
Tt
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) PBYR2545CTX
Fig.6. Transient thermal impedance per diode;
Zth j-hs = f(tp).
October 1998
3
Rev 1.300

No Preview Available !

Philips Semiconductors
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Product specification
PBYR2545CTF, PBYR2545CTX
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
4.0
seating
plane
4.4
max
2.9 max
7.9
7.5
17
max
3.5 max
not tinned
0.4 M
12 3
5.08
4.4
13.5
min
0.9
0.7
2.54
top view
0.55 max
1.3
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.300

No Preview Available !

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CTF, PBYR2545CTX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
1.0 (2x)
0.9
0.7
1.3
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300