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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR30100WT series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 60 V/ 80 V/ 100 V
IO(AV) = 30 A
VF 0.7 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR30100WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode
3 anode 2
mounting cathode
base
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR30
Tmb 139 ˚C
square wave; δ = 0.5;
Tmb 124 ˚C
square wave; δ = 0.5;
Tmb 124 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
-
-
-
- 65
60WT
60
60
60
MAX.
80WT
80
80
80
30
30
180
200
1
150
175
100WT
100
100
100
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX. UNIT
1.4 K/W
1 K/W
- K/W
November 1998
1
Rev 1.300

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR30100WT series
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF Forward voltage
IR Reverse current
Cd Junction capacitance
IF = 15 A; Tj = 125˚C
IF = 30 A; Tj = 125˚C
IF = 15 A
VR = VRWM
VR = VRWM; Tj = 125˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.77
5
5
600
MAX. UNIT
0.7 V
0.85 V
0.85 V
150 µA
15 mA
- pF
November 1998
2
Rev 1.300

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR30100WT series
PF / W
20 Vo = 0.550 V
Rs = 0.010 Ohms
15
PBYR30100PT
0.5
Tmb(max) / C122
D = 1.0
129
10
0.2
0.1
136
5
I tp
D
=
tp
T
143
Tt
0 150
0 10 20 26
IF(AV) / A
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x D.
PF / W
15
Vo = 0.550 V
Rs = 0.010 Ohms
10
PBYR30100
Tmb(max) / C
129
a = 1.57
1.9
2.2
2.8
136
4
5 143
0 150
0 5 10 15
IF(AV) / A
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
IF / A
100
Tj = 25 C
Tj = 125 C
80
60
Typ
PBYR30100PT
Max
40
20
Fig.3.
0
0 0.5 1
1.5 2
VF / V
Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
IR/ mA
100
PBYR30100PT
Tj/ C = 150
10
125
1 100
75
0.1
50
0.01
10 20 30 40 50 60 70 80 90 100
VR/ V
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Cd/ pF
10000
PBYR30100PT
1000
100
10
1
10
VR/ V
100
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD tp
D
=
tp
T
0.001
1us
10us
Tt
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s) PBYR30100WT
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
November 1998
3
Rev 1.300

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Philips Semiconductors
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
3.5
21
max
Product specification
PBYR30100WT series
16 max
5.3 max
1.8
5.3 7.3
o 3.5
max
15.5
max
seating
plane
4.0
15.5 max
min 1 2
3
2.2 max
3.2 max
1.1
5.45 5.45
2.5
0.4 M
0.9 max
Fig.7. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
November 1998
4
Rev 1.300

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR30100WT series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
5
Rev 1.300