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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR4045WT series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IF(AV) = 40 A
VF 0.58 V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR4045WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYR40
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Tmb 107 ˚C
Average output current (both square wave; δ = 0.5; Tmb 120 ˚C
diodes conducting)
Repetitive peak forward
current
square wave; δ = 0.5; Tmb 120 ˚C
Non-repetitive peak forward t = 10 ms
current
t = 8.3 ms
Peak repetitive reverse
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
surge current
Operating junction
limited by Tj max
temperature
Storage temperature
-
-
-
-
-
-
-
-
-
- 65
MAX.
40WT 45WT
40 45
40 45
40 45
40
40
300
325
2
150
150
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX. UNIT
1.4 K/W
1 K/W
- K/W
December 1998
1
Rev 1.000

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR4045WT series
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF Forward voltage per diode IF = 20 A; Tj = 125˚C
IF = 40 A; Tj = 125˚C
IF = 20 A
IF = 40 A
IR Reverse current per diode VR = VRWM
VR = VRWM; Tj = 100˚C
Cd Junction capacitance
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
-
-
-
-
TYP.
0.5
0.68
0.51
0.67
0.4
25
700
MAX. UNIT
0.58 V
0.75 V
0.6 V
0.76 V
2.5 mA
70 mA
- pF
December 1998
2
Rev 1.000

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR4045WT series
Forward dissipation, PF (W)
20
18 PBYR4045WT
16 0.5
14
0.2
12 0.1
10
Tmb(max) (C)
122
D = 1.0
124.8
127.6
130.4
133.2
136
8 138.8
6
tp
D = tp/T
141.6
4 144.4
2 T 147.5
0 150
0 5 10 15 20 25 30
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x D.
1000
Reverse Current, IR (mA)
PBYR4045WT
100
Tj =125C
10
Tj =100C
Tj =75C
1
Tj =50C
0.1
Tj =25C
0.01
0
10 20 30 40
Reverse Voltage, VR (V)
50
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
Forward dissipation, PF (W)
Tmb(max) (C)
16 127.6
PBYR4045WT
14 130.4
12
2.2 1.9
4 2.8
a = 1.57 133.2
10 136
8 138.8
6 141.6
4 144.4
2 147.2
0 150
0 5 10 15 20
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
Forward Current, IF (A)
50
Tj =125 C
45
40 Tj = 25 C
35
typ
30
25
20
15
10
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage, VF (V)
PBYR4045WT
max
0.8 0.9 1
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Cd / pF
10000
PBYR4045WT
1000
100
1
10
VR / V
100
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Transient Thermal Impedance, Zth j-mb (K/W) PBYR4045WT
10
1 Single pulse
0.1
PD tp
t
0.01
1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
pulse width, tp (s)
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
December 1998
3
Rev 1.000

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Philips Semiconductors
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
3.5
21
max
Product specification
PBYR4045WT series
16 max
5.3 max
1.8
5.3 7.3
o 3.5
max
15.5
max
seating
plane
4.0
15.5 max
min 1 2
3
2.2 max
3.2 max
1.1
5.45 5.45
2.5
0.4 M
0.9 max
Fig.7. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
December 1998
4
Rev 1.000

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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR4045WT series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998
5
Rev 1.000