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PTB 20053
60 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20053 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 60 Watts, 860–900 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 60 Watts
• Gold Metallization
• Silicon Nitride Passivated
Gain vs. Frequency
(as measured in a broadband circuit)
13
12 VCC = 25 V
ICQ = 200 mA
11 Pout = 60 W
10
9
8
7
850 860 870 880 890 900
Frequency (MHz)
910
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20053LOT CODE
Package 20200
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
65
4.0
8.0
145
0.83
–40 to +150
1.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
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PTB 20053
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 50 mA
VBE = 0 V, IC = 50 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 250 mA
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz)
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA,
f = 900 MHz—all phase angles at frequency of test)
Symbol Min
Gpe 8.0
ηC 50
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA)
Z Source
Z Load
e
Typ
30
70
5.0
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
9.5 —
——
dB
%
— 10:1
Frequency
MHz
860
880
900
Z Source
R jX
4.3 0.2
4.1 1.1
4.1 1.7
Z Load
R jX
3.0 0.6
2.8 1.4
2.8 1.9
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Typical Performance
Efficiency vs. Frequency
(as measured in a broadband circuit)
80
70
60
50
40 VCC = 25 V
ICQ = 200 mA
30 Pout = 60 W
20
850 860 870 880 890 900
Frequency (MHz)
910
PTB 20053
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20053 Uen Rev. D 09-28-98