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PTB 20082
15 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20082 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
excellent device reliability. 100% lot traceability is standard.
• 10 Watts Linear Power
• Output Power at 1 dB Compressed = 15 W
• Class AB Characteristics
• 30% Collector Efficiency at 7.5 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
16
12
8 VCC = 26 V
ICQ = 70 mA
4 f = 2.0 GHz
0
01234
Input Power (Watts)
20082LOT CODE
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
1.4
52
0.29
–40 to +150
3.4
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1

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PTB 20082
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 5 mA, RBE = 22
VBE = 0 V, IC = 5 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 250 mA
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz)
Output Power at 1 dB Compression
(VCC = 26 Vdc, ICQ = 70 mA, f = 2.0 GHz)
Collector Efficiency
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA,
f = 2.0 GHz—all phase angles at frequency of test)
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
10
Gain (dB)
60
9 50
8
VCC = 26 V
7 ICQ = 70 mA
6
Efficiency (%)
40
30
Output Power (W) 20
5
1750
1800
1850 1900 1950
Frequency (MHz)
2000
10
2050
e
Symbol
V(BR)CER
V(BR)CES
V(BR)EBO
hFE
Min
50
50
4
20
Typ
5
Max
Units
Volts
Volts
Volts
Symbol Min
Gpe
P-1dB
ηC
Ψ
8
15
30
Typ Max Units
9 — dB
— — Watts
——
%
— 5:1
Broadband Test Fixture Performance
20 60
VCC = 26 V
16 ICQ = 70 mA
POUT = 7.5 W
50
Efficiency (%) 40
12 30
Gain (dB)
8
-1250
-2150
4
1900
Return Loss (dB)
-305
1925
1950
1975
Frequency (MHz)
2000
5/11/98
2

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e
Output Power vs. Supply Voltage
20
18
16
14
12
10
22
ICQ = 70 mA
f = 2.0 GHz
23 24 25 26
Supply Voltage (Volts)
27
PTB 20082
Intermodulation Distortion vs. Output Power
-20
-30
-40
-50
-60
-70
1
VCC = 28 V
ICQ = 40 mA
f1 = 1999.9 MHz
f2 = 2000.0 MHz
3 5 7 9 11 13
Output Power (Watts-PEP)
15
Power Gain vs. Output Power
10
9 ICQ = 70 mA
8
ICQ = 35 mA
7
6
ICQ = 18 mA
VCC = 26 V
f = 2.0 GHz
5
0.1
1.0
10.0
100.0
Output Power (Watts)
Impedance Data
VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA
Z Source
Z Load
Frequency
GHz
1.75
1.80
1.85
1.90
1.95
2.00
2.05
Z Source
R jX
5.8 -12.7
5.8 -11.9
5.8 -11.4
5.8 -10.2
6.0 -8.8
7.1 -5.9
7.7 -4.9
5/6/98
Z Load
R jX
9.29 -0.6
10.15
-0.9
9.80
-1.3
9.58 -1.5
8.83 -1.5
8.23 -1.3
8.79 -0.7
3
Z0 = 50

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PTB 20082
Typical Scattering Parameters
(VCE = 26 V, IC = 0.5 A)
f S11
(MHz)
Mag
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
0.855
0.879
0.931
0.961
0.977
0.984
0.989
0.992
0.998
0.998
0.997
0.991
0.987
0.974
0.950
0.905
0.824
0.708
0.659
0.731
0.827
0.889
Ang
-176
-176
-176
-178
-179
180
178
177
176
175
173
172
170
168
165
163
160
163
173
-178
-178
-180
S21
Mag Ang
4.80
3.55
1.36
0.558
0.157
0.103
0.263
0.380
0.476
0.563
0.650
0.740
0.847
0.978
1.15
1.39
1.67
1.86
1.83
1.57
1.22
0.919
82
75
40
22
19
145
149
142
134
125
116
107
98
87
75
59
39
12
-17
-46
-69
-85
e
S12
Mag
0.008
0.007
0.003
0.002
0.004
0.006
0.009
0.012
0.015
0.018
0.021
0.023
0.026
0.030
0.035
0.041
0.047
0.050
0.044
0.033
0.023
0.016
Ang
-24
-27
-29
31
78
84
81
76
72
66
60
54
50
44
35
24
7
-18
-45
-69
-91
-114
S22
Mag Ang
0.776
0.821
0.911
0.962
0.985
1.00
0.998
0.962
0.931
0.896
0.868
0.833
0.791
0.738
0.674
0.594
0.523
0.552
0.702
0.839
0.892
0.894
-172
-172
-174
-177
180
177
173
170
168
166
165
164
162
161
161
164
173
-172
-167
-171
-178
178
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
4
Specifications subject to change without notice.
L1
© Ericsson Inc. Components AB 1995
EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98