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PTB 20095
15 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20095 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 15 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
• 15 Watts, 915–960 MHz
• Class AB Characteristics
• Specified 25 Volts, 960 MHz Characteristics
- Output Power = 15 Watts
- Collector Efficiency = 50% Min at 15 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
25 VCC = 25 V
ICQ = 100 mA
20 f = 960 MHz
15
10
5
0
0.0 0.4 0.8 1.2 1.6 2.0
Input Power (Watts)
20095LOT CODE
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
6.7
65
0.4
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
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PTB 20095
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 100 mA
VBE = 0 V, IC = 100 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 1.0 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Symbol
Gain
(VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA, f = 960 MHz)
Collector Efficiency
(VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA, f = 960 MHz)
Intermodulation Distortion
(VCC = 25 Vdc, Pout = 15 W(PEP), ICQ = 100 mA, f1 = 915 MHz,
f2 = 916 MHz)
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA, f = 960 MHz
—all phase angles at frequency of test)
Gpe
ηC
IMD
Ψ
Min
10
50
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 15 W, ICQ = 100 mA)
Z Source
Z Load
e
Typ
30
70
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
11 —
——
dB
%
-32 — dBc
— 30:1
Frequency
MHz
915
935
960
Z Source
R jX
6.3 -4.3
6.0 -4.1
5.9 -3.8
Z Load
R jX
2.8 1.3
2.8 1.7
2.7 2.2
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Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
14 80
13
12 Efficiency (%)
70
60
11
10
9
8
900
VCC = 25 V
ICQ = 100 mA
Pout = 15 W
Gain (dB)
915 930 945 960
Frequency (MHz)
50
40
30
20
975
PTB 20095
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20095 Uen Rev. D 09-28-98