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PTB 20157
20 Watts, 1.35–1.85 GHz
RF Power Transistor
Description
The 20157 is an NPN common base RF power transistor intended
for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
30
25
20
15
10
5
0
0
VCC = 22 V
f = 1.85 GHz
1234567
Input Power (Watts)
• 20 Watts, 1.35–1.85 GHz
• Class C Characteristics
• 40% Min Collector Efficiency at 20 Watts
• Gold Metallization
• Silicon Nitride Passivated
20157LOT CODE
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4
6
75
0.43
–40 to +150
2.33
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1

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PTB 20157
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IC = 50 mA, RBE = 27
VBE = 0 V, IC = 50 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 500 mA
Symbol
V(BR)CER
V(BR)CES
V(BR)EBO
hFE
Min
50
50
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz)
Collector Efficiency
(VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz)
Load Mismatch Tolerance
(VCC = 22 Vdc, Pout = 20 W, f = 1.85 GHz
—all phase angles at frequency of test)
Symbol Min
Gpe 6
ηC 40
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 22 Vdc, Pout = 20 W)
Z Source
Z Load
e
Typ
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
7—
43 —
dB
%
— 10:1
Frequency
GHz
1.350
1.400
1.450
1.500
1.550
1.600
1.650
1.700
1.750
1.800
1.850
Z Source
R jX
8.2 -15.0
7.7 -13.0
7.4 -12.0
7.3 -11.0
7.2 -10.0
7.3 -9.2
7.4 -8.6
7.6 -8.1
7.9 -7.8
8.1 -7.6
8.4 -7.5
2
Z Load
R jX
9.3 -15
8.8 -15
8.3 -14
7.9 -14
7.5 -13
7.2 -13
6.9 -13
6.6 -12
6.4 -12
6.2 -11
6.1 -11

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Typical Performance
Gain & Return Loss vs. Frequency
(as measured in a broadband circuit)
10 5
VCC = 22 V
0
8 Pout = 20 W
-5
6 -10
4 -15
-20
2
-25
0 -30
1.3 1.4 1.5 1.6 1.7 1.8 1.9
Frequency (GHz)
PTB 20157
Gain & Efficiency vs. Power Out
10 50
8 40
6 30
4 20
VCC = 22 V
2
f = 1.85 GHz
10
00
0 5 10 15 20 25 30
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20157 Uen Rev. D 09-28-98