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e
PTB 20176
5 Watts, 1.78–1.92 GHz
RF Power Transistor
Description
The 20176 is a common emitter RF power transistor intended for 26
Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum
output power, it is specifically designed for class A or AB linear power
amplifier applications. Ion implantation, nitride surface passivation
and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• 26 Volt, 1.85 GHz Characteristics
• Class A/AB
• Internally Matched
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
10
8
6
4
VCC = 26 V
2 ICQ = 30 mA
f = 1850 MHz
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
20176LOT CODE
Package 20201
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
RθJC
Value
20
45
4.0
1
21
0.12
150
8.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1

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PTB 20176
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to B
Breakdown Voltage E to B
DC Current Gain
Output Capacitance
Conditions
IB = 0 A, IC = 5 mA, RBE = 22
IB = 0 A, IC = 5 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 200 mA
VCB = 26 V, IE = 0 A, f = 1 MHz
Symbol
V(BR)CER
V(BR)CBO
V(BR)EBO
hFE
Cob
Min
45
45
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 30 mA, f = 1.85 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz)
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 5 W(PEP), ICQ = 30 mA,
f1 = 1.8800 GHz, f2 = 1.8801 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA,
f = 1.85 GHz—all phase angles at frequency of test)
Symbol Min
Gpe
P-1dB
11
6.3
ηC 38
IMD -30
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA)
Z Source
Z Load
e
Typ
7
Max
100
Units
Volts
Volts
Volts
pF
Typ Max Units
12 —
dB
7.9 — Watts
42 —
%
-35 — dBc
— 10:1
Frequency
GHz
1.800
1.850
1.900
Z Source
R jX
7.8 -7.0
7.6 -6.4
7.5 -5.8
Z Load
R jX
6.7 1.5
6.7 2.3
6.7 3.1
6/24/97
2

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Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
15
14
13
12
11
10
1775
1800
VCC = 26 V
ICQ = 30 mA
Pout = 5 W
1825 1850 1875
Frequency (MHz)
1900
1925
PTB 20176
Intermodulation Distortion vs. Power Output
-27
VCC = 26 V
-30 ICQ = 30 mA
f1 = 1880.0 MHz
-33 f2 = 1880.1 MHz
-36
-39
-42
2
34 56
Output Power (Watts-PEP)
7
Efficiency vs. Output Power
60
50
40
30
20
10
0
VCC = 26 V
ICQ = 30 mA
f = 1850 MHz
24 68
Output Power (Watts)
10
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
6/24/97
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
3
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20176 Uen Rev. C 09-28-98