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e
PTB 20187
4 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20187 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
6
• 4 Watts, 1.80–2.00 GHz
• Class AB Characteristics
• 30% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
5
4
VCC = 26 V
3 ICQ = 50 mA
f = 1.8-2.0 GHz
2
0.0 0.2 0.4 0.6 0.8
Input Power (Watts)
20187LOT CODE
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCES
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
1.0
19.7
0.112
–40 to +150
8.9
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1

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PTB 20187
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 10 mA
VBE = 0 V, IC = 10 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 50 mA
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
20
50
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.00 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 50 mA, f = 2.00 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA, f = 2.00 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA,
f = 2.00 GHz—all phase angles at frequency of test)
Symbol Min
Gpe
P-1dB
ηC
Ψ
8
4
30
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 4 W, ICQ = 50 mA)
Z Source
Z Load
e
Typ
5
40
Max
Units
Volts
Volts
Volts
Typ Max Units
10 —
dB
6 — Watts
——
%
— 5:1
Frequency
GHz
1.80
1.90
2.00
Z Source
R jX
14.49
-7.50
12.30
-6.16
10.00
-3.55
Z Load
R jX
11.49
-10.15
7.23 -6.29
4.41 -1.34
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
5/19/98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20187 Uen Rev. B 09-28-98