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DISCRETE SEMICONDUCTORS
DATA SHEET
PTC4001T
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 18

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Philips Semiconductors
NPN microwave power transistor
Product specification
PTC4001T
FEATURES
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Interdigitated structure provides
high emitter efficiency
Gold metallization realizes very
good characteristics stability and
excellent lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common collector oscillator circuits
under CW conditions in military and
professional applications up to
5 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave transistor in a SOT440A
metal ceramic flange package with
collector connected to flange.
QUICK REFERENCE DATA
Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz.
MODE OF
OPERATION
f
(GHz)
VCC
PL
IC
(V)
(mW)
(mA)
class A (CW)
2.88 to 3; note 1 20 550 200
Note
1. Oscillating frequency should stabilize in this range.
PINNING - SOT440A
PIN DESCRIPTION
1 base
2 emitter
3 collector connected to flange
handbook, 4 columns
1
Top view
2
b
3
MAM131
c
e
Marking code: 440.
Fig.1 Simplified outline and symbol.
1997 Feb 18
2

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Philips Semiconductors
NPN microwave power transistor
Product specification
PTC4001T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VCER
VEBO
IC
Ptot
Tstg
Tj
Tsld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
average collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
Note
1. At 0.1 mm from case.
CONDITIONS
open emitter
open base
RBE = 70
open collector
Tmb = 75 °C
t < 10 s; note 1
MIN.
65
MAX.
40
16
35
3
0.25
4
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook, 5
Ptot max
(W)
4
3
2
1
0
0
MGD975
50 100 150 200
Tmb (°C)
Fig.2 Power derating curve as a function of
mounting base temperature.
handbook, h1alfpage
IC
(A)
0.22
101
0.08
MGA028
(1) (2)
102
1
10 16
VCE (V)
102
Tmb = 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE < 250 .
Fig.3 DC SOAR.
1997 Feb 18
3