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PTF 10195
125 Watts, 869–894 MHz
GOLDMOS ® Field Effect Transistor
Description
The 10195 is an internally matched 125–watt GOLDMOS FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
• Full Gold Metallization
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Power Output and Efficiency
vs. Input Power
160 64
140 56
120 Efficiency 48
100 40
80 VDD = 28 V 32
60 24
IDQ = 1.3 A
40 f = 894 MHz 16
20 Power Output
8
00
0 1 2 34 5 6
Input Power (Watts)
1019512345600-A
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 1300 mA, f = 894 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gpe
P-1dB
h
Y
13
125
45
10:1
Typ
14
140
53
Max Units
— dB
— Watts
—%
——
e
1

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PTF 10195
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Drain-Source Leakage Current VDS = 26 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 100 mA
Forward Transconductance
VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
TyepsticCailrcPueirtformance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
20 200
Output Power (W)
18 160
16
Gain (dB)
VDD = 28 V
IDQ = 1.3 A
120
14 80
12 Efficiency (%) 40
10
869
874 879 884 889
Frequency (MHz)
0
894
e
Symbol
V(BR)DSS
IDSS
VGS(th)
gfs
Min
65
3.0
Typ
3.0
Max
1.0
5.0
Units
Volts
mA
Volts
Siemens
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
266
1.52
40 to +150
.66
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20 65
Efficiency
18 55
16 45
14 Gain
12
10
8
6
4
2
869
874
VDD = 28 V
IDQ = 1.3 A
POUT = 125 W
Return Loss (dB)
35
25
15
0
5
-10
-5
-20
-15
-30
-25
879 884 889
Frequency (MHz)
894
2

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e
Power Gain vs. Output Power
17
IDQ = 1600 mA
VDD = 28 V
f = 894 MHz
16
IDQ = 1300 mA
15
IDQ = 1000 mA
14
13
0
1 10 100
Output Power (Watts)
1000
PTF 10195
Output Power (@ 1 dB Compression)
vs. Supply Voltage
130
120
110
100 IDQ = 1300 mA
f = 894 MHz
90
80
20
22 24 26 28
Supply Voltage (Volts)
30
Gate-Source Voltage vs. Case Temperature
1.04
1.03 Voltage normalized to 1.0 V
1.02 Series show current (A)
1.01
1.00
0.99
0.98
0.97
0.8
2.728
4.656
6.584
8.512
10.44
0.96
0.95
-20
30 80
Case Temperature (°C)
130
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-20
VDD = 28 V, IDQ = 1.3 A
3rd Order
-30 f1 = 894 MHz, f2 = 894.1 MHz
-40 5th
-50
-60
10
20 30 40 50 60 70 80
Output Power (Watts-PEP)
7th
90 100
Capacitance vs. Supply Voltage *
300
250 Cgs
200
150 Cds
VGS = 0 V
f = 1 MHz
40
35
30
25
20
100
50
0
0
15
10
Crss
5
0
10 20 30 40
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished product will not yield these figures.
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