PTF10195.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 PTF10195 데이타시트 다운로드

No Preview Available !

PTF 10195
125 Watts, 869–894 MHz
GOLDMOS ® Field Effect Transistor
Description
The 10195 is an internally matched 125–watt GOLDMOS FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
• Full Gold Metallization
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Power Output and Efficiency
vs. Input Power
160 64
140 56
120 Efficiency 48
100 40
80 VDD = 28 V 32
60 24
IDQ = 1.3 A
40 f = 894 MHz 16
20 Power Output
8
00
0 1 2 34 5 6
Input Power (Watts)
1019512345600-A
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 1300 mA, f = 894 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 125 W, IDQ = 1300 mA, f = 894 MHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gpe
P-1dB
h
Y
13
125
45
10:1
Typ
14
140
53
Max Units
— dB
— Watts
—%
——
e
1

No Preview Available !

PTF 10195
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Drain-Source Leakage Current VDS = 26 V, VGS = 0 V
Gate Threshold Voltage
VDS = 10 V, ID = 100 mA
Forward Transconductance
VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
TyepsticCailrcPueirtformance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
20 200
Output Power (W)
18 160
16
Gain (dB)
VDD = 28 V
IDQ = 1.3 A
120
14 80
12 Efficiency (%) 40
10
869
874 879 884 889
Frequency (MHz)
0
894
e
Symbol
V(BR)DSS
IDSS
VGS(th)
gfs
Min
65
3.0
Typ
3.0
Max
1.0
5.0
Units
Volts
mA
Volts
Siemens
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
266
1.52
40 to +150
.66
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Broadband Test Fixture Performance
20 65
Efficiency
18 55
16 45
14 Gain
12
10
8
6
4
2
869
874
VDD = 28 V
IDQ = 1.3 A
POUT = 125 W
Return Loss (dB)
35
25
15
0
5
-10
-5
-20
-15
-30
-25
879 884 889
Frequency (MHz)
894
2

No Preview Available !

e
Power Gain vs. Output Power
17
IDQ = 1600 mA
VDD = 28 V
f = 894 MHz
16
IDQ = 1300 mA
15
IDQ = 1000 mA
14
13
0
1 10 100
Output Power (Watts)
1000
PTF 10195
Output Power (@ 1 dB Compression)
vs. Supply Voltage
130
120
110
100 IDQ = 1300 mA
f = 894 MHz
90
80
20
22 24 26 28
Supply Voltage (Volts)
30
Gate-Source Voltage vs. Case Temperature
1.04
1.03 Voltage normalized to 1.0 V
1.02 Series show current (A)
1.01
1.00
0.99
0.98
0.97
0.8
2.728
4.656
6.584
8.512
10.44
0.96
0.95
-20
30 80
Case Temperature (°C)
130
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-20
VDD = 28 V, IDQ = 1.3 A
3rd Order
-30 f1 = 894 MHz, f2 = 894.1 MHz
-40 5th
-50
-60
10
20 30 40 50 60 70 80
Output Power (Watts-PEP)
7th
90 100
Capacitance vs. Supply Voltage *
300
250 Cgs
200
150 Cds
VGS = 0 V
f = 1 MHz
40
35
30
25
20
100
50
0
0
15
10
Crss
5
0
10 20 30 40
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished product will not yield these figures.
3

No Preview Available !

PTF 10195
Impedance Data
VDD = 28 V, POUT = 125 W, IDQ = 1300 mA
Z Source
e
D
Z Load
Z0 = 50 W
Frequency
MHz
860
869
880
894
905
Z Source W
R jX
1.97 -1.13
1.86 -0.94
1.69 -0.73
1.52 -0.44
1.39 -0.22
Test Circuit
G
S
Z Load W
R jX
2.30 0.99
2.18 1.19
2.00 1.38
1.79 1.63
1.69 1.85
Z Load
905 MHz
905 MHz
860 MHz
860 MHz
Z Source
0.1
Test Circuit Schematic for f = 894 MHz
DUT
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11
l12
l13
PTF 10195
LDMOS Transistor
0.0273 l 894 MHz Microstrip 50 W
0.0244 l 894 MHz Microstrip 30 W
0.0204 l 894 MHz Microstrip 30 W
0.1800 l 894 MHz Microstrip 30W
0.0715 l 894 MHz Microstrip 8.63W
0.0802 l 894 MHz Microstrip 8.63 W
0.1026 l 894 MHz Microstrip 8.63 W
0.0491 l 894 MHz Microstrip 8.63 W
0.0389 l 894 MHz Microstrip 30W
0.1411 l 894 MHz Microstrip 30 W
0.0116 l 894 MHz Microstrip 30 W
0.0428 l 894 MHz Microstrip 30 W
0.0293 l 894 MHz Microstrip 50 W
C1, C3, C8, C12
C2
C4, C5
C6
C7
C11
C13
C10
C9
J1,J2
L1
R1, R2,R3
Circuit Board
Capacitor, 43pF 100B 430
Capacitor, 4.3pF 100B 4R3
Capacitor, 5.6pF 100B 5R6
Capacitor, 7.5pF 100B 7R5
Capacitor, 9.1pF 100B 9R1
Capacitor, 5.1pF 100B 5R1
Capacitor, 3.6pF 100B 3R6
Capacitor, 0.1uF
Digi-KeyP4525-ND
Capacitor,100uF,50V Digi-KeyP5182-ND
Connector, SMA, Female, Panel Mount
1301-RPM 513 412/53
7 Turns,22AWG,.120 DIA I.D. N/A
Resistor, 220ohm Digi-Key 220QBK-ND
.031" thick, er = 4.0, G200 AlliedSignal
4

No Preview Available !

e
PTF 10195
Components Layout (not to scale)
10195_A INPUT
Artwork (not to scale)
ERICSSON
ERICSSON
10195_A OUTPUT
5