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IL211A/212A/213A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio
IL211A—20% Minimum
IL212A—50% Minimum
IL213A—100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211A/212A/213A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL211A//212A/213A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
IF=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................7 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ....................................280 mW
Derate Linearly from 25°C......................3.3 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.3
0.1
25
Breakdown Voltage
Dark Current,
Collector-Emitter
BVCEO
BVECO
ICEOdark
30
7
5
Capacitance,
Collector-Emitter
CCE
10
Package
DC Current Transfer CTRDC
Ratio
IL211A
20 50
IL212A
50 80
IL213A
100 130
Saturation Voltage,
Collector-Emitter
VCEsat
Isolation Test
Voltage
VIO 2500
Capacitance,
Input toOutput
CIO
0.5
Resistance,
Input to Output
RIO
100
Switching Time
ton,toff
3.0
Max. Unit
Condition
1.5 V
100 µA
pF
V
V
50 nA
pF
IF=10 mA
VR=6.0 V
VR=0
IC=10 µA
IE=10 µA
VCE=10 V
IF=0
VCE=0
% IF=10 mA,
VCE=5 V
0.4 IF=10 mA,
IC=2.0 mA
VACRMS
pF
G
µs IC=2 mA,
RE=100 ,
VCE=10 V
5–1

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Figure 1. Forward voltage versus forward current
1.4
1.3
Ta = -55°C
1.2
1.1 Ta = 25°C
1.0
0.9
Ta = 100°C
0.8
0.7
.1
1 10
If- Forward Current - mA
100
Figure 5. Normalized collector-base photocurrent
versus LED current
10
Normalized to:
Vcb = 9.3 V
1
IF = 10 mA
Ta = 25 °C
.1
.01
.1
1 10
IF - LED Current - mA
100
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
1.5
Normalized to:
Vce = 10 V
IF = 10 mA
1.0 Ta = 25 °C
Vce = 5 V
0.5
0.0
.1
Vce = 0.4 V
1 10
IF - LED Current - mA
100
Figure 3. Collector-emitter current versus LED current
150
Ta = 25°C
100
Vce = 10 V
50
0
.1
Vce = 0.4 V
1 10
IF - LED Current - mA
100
Figure 4. Normalized collector-base photocurrent
versus LED current
100
Normalized to:
Vcb = 9.3 V
IF = 1 mA
10 Ta = 25 °C
1
Figure 6. Collector-base photocurrent versus LED
current
10 00
Ta = 25°C
Vcb = 9.3 V
10 0
10
1
.1
.1
1 10
I F - LED Current - mA
100
Figure 7. Collector-emitter leakage current versus
temperature
g
p
105
104
103
102
101 Vce = 10V
100 TYPICAL
10-1
10-2
-20
0 20 40 60 80 100
Ta - Ambient Temperature - °C
Figure 8. Normalized saturated HFE versus base
current and temperature
2.0 70°C
1.5 25°C
50°C
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25 °C
1.0
Vce = 0.4 V
0.5
.1
.1 1 10 100
IF - LED Current - mA
0.0
1
10 100
Ib - Base Current - µA
1000
IL211A/212A/213A
5–2

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Figure 9. Typical switching characteristics versus base
resistance (saturated operation)
100
Input:
50
IF =10mA
Pulse width=100 mS
Duty cycle=50%
T OFF
10
5
TON
1.0
10K
50K 100K 500K 1M
Base-emitter resistance, RBE ()
Figure 10. Typical switching times
versus load resistance
1000
500
100
Input:
IF=10 mA
Pulse width=100 mS
Duty cycle=50%
50
T OFF
10
5 TON
1
0.1 0.5 1
5 10 50 100
Load resistance RL (K)
IL211A/212A/213A
5–3