BTS432I2.pdf 데이터시트 (총 15 페이지) - 파일 다운로드 BTS432I2 데이타시트 다운로드

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PROFET® BTS 432 I2
Smart Highside Power Switch
Features
Product Summary
Load dump and reverse battery protection1)
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
Diagnostic feedback
RON
38
Open load detection in OFF-state
CMOS compatible input
Electrostatic discharge (ESD) protection
Loss of ground and loss of Vbb protection2)
Overvoltage protection
IL(SCp)
IL(SCr)
IL(ISO)
42
33
11
Undervoltage and overvoltage shutdown with auto-restart and
hysteresis
5
V
V
V
V
m
A
A
A
Application
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
1
SMD
5
Standard
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
R bb
Overvoltage
protection
Current
Gate
limit protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Infineon Technologies AG
Page 1 of 15
1999-02-19

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BTS 432 I2
Pin Symbol Function
1
GND
- Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5
OUT
O Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Electrostatic discharge capability (ESD)
(Human Body Model)
Tj=150 °C:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
Symbol
Vbb
Vs3)
IL
Tj
Tstg
Ptot
EAS
VESD
VIN
IIN
IST
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on pcb4):
Values
63
66.5
Unit
V
V
self-limited
-40 ...+150
-55 ...+150
125
A
°C
W
1.7 J
2.0 kV
-0.5 ... +6
±5.0
±5.0
V
mA
1
75
tbd
K/W
3) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
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1999-02-19

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Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
BTS 432 I2
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
Tj=25 °C: RON
Tj=150 °C:
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT:
Turn-off time
RL = 12 , Tj =-40...+150°C
to 10% VOUT:
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
IL(ISO)
IL(GNDhigh)
ton
toff
dV /dton
-dV/dtoff
-- 30 38 m
55 70
9 11
-- A
-- -- 1 mA
50 160 300
10 -- 80
µs
0.4 -- 2.5 V/µs
1 -- 5 V/µs
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C: Vbb(on)
4.5 -- 42 V
Undervoltage shutdown
Tj =-40...+150°C: Vbb(under)
2.4
-- 4.5 V
Undervoltage restart
Tj =-40...+150°C: Vbb(u rst)
-- -- 4.5 V
Undervoltage restart of charge pump
Vbb(ucp)
see diagram page 12
Tj =-40...+150°C:
-- 6.5 7.5 V
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
-- 0.2
-- V
Overvoltage shutdown
Tj =-40...+150°C: Vbb(over)
42 -- 52 V
Overvoltage restart
Tj =-40...+150°C: Vbb(o rst)
42 -- -- V
Overvoltage hysteresis
Tj =-40...+150°C: Vbb(over)
-- 0.2
-- V
Overvoltage protection6)
Tj =-40°C: Vbb(AZ)
60 -- -- V
Ibb=40 mA
Tj =25...+150°C:
63 67
Standby current (pin 3)
Ibb(off)
µA
VIN=0, IST=0,
Tj=-40...+25°C:
-- 40 70
Tj=150°C:
-- 50 110
Operating current (Pin 1)7), VIN=5 V
IGND
-- 1.1
-- mA
5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V
6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
7) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Infineon Technologies AG
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1999-02-19

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Protection Functions
Initial peak short circuit current limit (pin 3 to 5)8),
( max 400 µs if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C:
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation9),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 10)
Integrated resistor in Vbb line
IL(SCp)
IL(SCr)
td(SC)
VON(CL)
VON(SC)
Tjt
Tjt
EAS
ELoad12
ELoad24
-Vbb
Rbb
BTS 432 I2
-- -- 72 A
-- 42
--
22 -- --
20 33
-- A
80 -- 400 µs
-- 58
-- 8.3
150 --
-- 10
-- --
-- --
-- 120
-- V
-- V
-- °C
-- K
1.7 J
1.3
1.0
32 V
--
Diagnostic Characteristics
Open load detection current
Open load detection voltage
Tj=-40..150°C:
IL(off)
VOUT(OL)
10 30 60 µA
2 3 4V
) Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4)
9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx.
EAS= 1/2 * L * I2L * (VOVN(OCNL()C-LV) bb ), see diagram page 8
10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these
condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external
GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page
7).
Infineon Technologies AG
Page 4
1999-02-19

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BTS 432 I2
Input and Status Feedback11)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2)
Tj =-40..+150°C:
Tj =-40..+150°C:
VIN = 0.4 V:
VIN(T+)
VIN(T-)
VIN(T)
IIN(off)
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5
1 --
-- V
30 µA
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
10 25 50 µA
Delay time for status with open load
after Input neg. slope (see diagram page 12)
td(ST OL3)
40 -- 300 µs
Status invalid after positive input slope
td(ST SC)
80 200 400 µs
(short circuit)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA: VST(high)12) 4.4 5.1 6.5
V
Tj =-40...+150°C, IST = +1.6 mA: VST(low)
-- -- 0.4
Max. status current for
valid status output,
current source (out): -IST
current sink (in) : +IST13)
-- -- 0.25 mA
-- -- 1.6
Tj =-40...+150°C
11) If a ground resistor RGND is used, add the voltage drop across this resistor.
12) VSt high Vbb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Infineon Technologies AG
Page 5
1999-02-19