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BTS 5210G
Smart High-Side Power Switch
Two Channels: 2 x 140m
Status Feedback
Product Summary
Package
Operating Voltage
On-state Resistance
Nominal load current
Current limitation
Vbb
Active channels one
5.5...40V
two parallel
RON
IL(NOM)
IL(SCr)
140m
2.4A
6.5A
70m
3.9A
6.5A
P-DSO-14
General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOStechnology.
Providing embedded protective functions
Applications
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN1
ST1
IN2
ST2
Logic
Channel 1
Channel 2
Load 1
Load 2
Diagnostic Function
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
GND
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2003-Oct-01

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Functional diagram
GND
IN1
ST1
internal
voltage supply
ESD
logic
gate
control
+
charge
pump
current limit
clamp for
inductive load
temperature
sensor
Open load
detection
channel 1
reverse
battery
protection
IN2
control and protection circuit
ST2 equivalent to
channel 1
BTS 5210G
VBB
OUT1
OUT2
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BTS 5210G
Pin Definitions and Functions
Pin Symbol Function
Positive power supply voltage. Design the
1,7,
8,14
Vbb
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
2
GND
Logic Ground
3 IN1 Input 1,2 activates channel 1,2 in case
5 IN2
of logic high signal
4 ST1 Diagnostic feedback 1,2 of channel 1,2
6 ST2
open drain
12,13 OUT1
9,10 OUT2
Output 1,2 protected high-side power output of
channel 1,2. Design the wiring for the max.
short circuit current; both output pins have to
be connected in parallel for operation
according this spec.
11 NC
Not Connected
Pin configuration
(top view)
Vbb
GND
IN1
ST1
IN2
ST2
Vbb
1
2
3
4
5
6
7
14 Vbb
13 OUT1
12 OUT1
11 NC
10 OUT2
9 OUT2
8 Vbb
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Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
RI2) = 2 , td = 400 ms; IN = low or high,
each channel loaded with RL = 13.5 ,
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
(all channels active)
Ta = 25°C:
Ta = 85°C:
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150°C4), see diagrams on page 10
IL = 2.9 A, EAS = 65 mJ, 0
one channel:
IL = 5.7 A, EAS = 125 mJ, 0 two parallel channels:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k; C=100pF
Input voltage (DC) see internal circuit diagram page 9
Current through input pin (DC)
Pulsed current through input pin5)
Current through status pin (DC)
Vbb
Vbb
IL
VLoad dump3)
Tj
Tstg
Ptot
ZL
VESD
VIN
IIN
IINp
IST
BTS 5210G
Values Unit
43 V
36 V
self-limited
60
A
V
-40 ...+150
-55 ...+150
3,05
1,59
°C
W
11,2
5,6
1.0
4.0
8.0
mH
kV
-10 ... +16
±0.3
±5.0
±5.0
V
mA
1) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended.
2) RI = internal resistance of the load dump test pulse generator
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
5) only for testing
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Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
junction - soldering point6)7)
junction – ambient6)
@ 6 cm2 cooling area
each channel:
one channel active:
all channels active:
Rthjs
Rthja
Electrical Characteristics
Parameter and Conditions, each of the four channels
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Symbol
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A
each channel, Tj = 25°C:
Tj = 150°C:
two parallel channels, Tj = 25°C:
see diagram, page 11
RON
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
Device on PCB6), Ta = 85°C, Tj 150°C
Output current while GND disconnected or pulled up8); IL(GNDhigh)
Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time9)
IN to 90% VOUT: ton
Turn-off time
IN to 10% VOUT: toff
RL = 12
Slew rate on 9)
Slew rate off 9)
10 to 30% VOUT, RL = 12 : dV/dton
70 to 40% VOUT, RL = 12 : -dV/dtoff
BTS 5210G
Values
Unit
min typ max
-- -- 15 K/W
-- -- --
-- 45
--
-- 40
--
Values
Unit
min typ max
-- 110 140 m
-- 210 280
-- 55 70
1.8 2.4
3.4 3.9
-- A
-- -- 2 mA
-- 100 250 µs
-- 100 270
0.2 -- 1.0 V/µs
0.2 -- 1.1 V/µs
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) Soldering point: upper side of solder edge of device pin 15. See page 14
8) not subject to production test, specified by design
9) See timing diagram on page 12.
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