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PROFET® Data Sheet BTS555
Smart Highside High Current Power Switch
Reversave
Reverse battery protection by self turn on of
power MOSFET
Features
Overload protection
Current limitation
Short circuit protection
Overtemperature protection
Overvoltage protection (including load dump)
Clamp of negative voltage at output
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SCp)
IL : IIS
62 V
44 V
5.0 ... 34 V
2.5 m
165 A
520 A
30 000
Fast deenergizing of inductive loads 1)
Low ohmic inverse current operation
Diagnostic feedback with load current sense
Open load detection via current sense
PG-TO218-5-146
Loss of Vbb protection2)
Electrostatic discharge (ESD) protection
Green Product (RoHS compliant)
AEC qualified
5
1
Straight leads
Application
Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads
Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSchip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 IN
ESD
I IN
Logic
VIN
V IS
Logic GND
I IS
IS
4
RIS
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT 1, 5
IL
Load
Temperature
sensor
PROFET
Load GND
1 ) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
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Pin
1
2
3
4
5
Symbol
OUT
IN
Vbb
IS
OUT
Data Sheet BTS555
Function
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)
Input, activates the power switch in case of short to ground
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the Vbb connection
instead of this pin4).
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
Output to the load. The pins 1 and 5 must be shorted with each other
especially in high current applications!3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (see page 4 and 5)
Supply voltage for full short circuit protection,
(EAS limitation see diagram on page 10) Tj,start=-40°C…+150°C:
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI5) = 2 , RL = 0.1 , td = 200 ms,
IN, IS = open or grounded
Vbb
Vbb
IL
VLoad dump6)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 15 mH, 0 , see diagram on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
Tj
Tstg
Ptot
EAS
VESD
IIN
IIS
Values Unit
40 V
34 V
self-limited A
80 V
-40 ...+150
-55 ...+150
360
°C
W
3J
4.0 kV
+15 , -250 mA
+15 , -250
3) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4) Otherwise add up to 0.5 m(depending on used length of the pin) to the RON if the pin is used instead of the
tab.
5) RI = internal resistance of the load dump test pulse generator.
6) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
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Data Sheet BTS555
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
junction - ambient (free air): RthJA
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 7)
IL = 30 A, Tj = 25 °C: RON
VIN = 0, IL = 30 A, Tj = 150 °C:
IL = 120 A, Tj = 150 °C:
Vbb = 6 V8), IL = 20 A, Tj = 150 °C:
Nominal load current9) (Tab to pins 1,5)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Maximum load current in resistive range
(Tab to pins 1,5)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
Turn-on time11)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 , Tj =-40...+150°C
Slew rate on 11) (10 to 30% VOUT )
RL = 1
Slew rate off 11) (70 to 40% VOUT )
RL = 1
RON(Static)
IL(ISO)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
Values
min typ max
-- -- 0.35
-- 30
--
Unit
K/W
Values
Unit
min typ max
-- 1.9
-- 3.3
-- --
-- 4.6
128 165
2.5 m
4.0
4.0
9.0
-- A
520 -- --
360 -- -- A
120 -- 600 µs
50 -- 200
0.3 0.5 0.8 V/µs
0.3 0.7
1 V/µs
7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
8) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
9) not subject to production test, specified by design
10) TJ is about 105°C under these conditions.
11) See timing diagram on page 14.
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Data Sheet BTS555
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
VbIN = 12 V, IL = - 30 A
Tj = 25 °C:
see description on page 10
Tj = 150 °C:
Nominal inverse load current (Pins 1,5 to Tab)
VON = -0.5 V, Tc = 85 °C10
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
RON(inv)
IL(inv)
-VON
Values
Unit
min typ max
-- 1.9
3.3
128 165
2.5 m
4.0
-- A
-- 0.6 0.7 V
Operating Parameters
Operating voltage (VIN = 0) 12)
Undervoltage shutdown 13)
Undervoltage start of charge pump
see diagram page 15
Overvoltage protection14)
Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
Standby current
IIN = 0
Tj =-40...+25°C:
Tj = 150°C:
Vbb(on)
VbIN(u)
VbIN(ucp)
VbIN(Z)
Ibb(off)
5.0 -- 34
1.5 3.0 4.5
V
V
3.0 4.5 6.0 V
60 -- -- V
62 66
--
-- 15 25 µA
-- 25 50
12) If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).
For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and
short circuit.
13) VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT Vbb - 3 V.
14) See also VON(CL) in circuit diagram on page 8.
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Data Sheet BTS555
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions15)
Short circuit current limit (Tab to pins 1,5)16)
VON = 12 V, time until shutdown max. 300 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 17)
(inductive load switch off)
IL= 40 mA:
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
td(SC)
-VOUT(CL)
VON(CL)
VON(SC)
Tjt
Tjt
Reverse Battery
Reverse battery voltage 18)
On-state resistance (Pins 1,5 to pin 3)
Tj = 25°C:
Vbb =-12V, VIN=0, IL=- 30 A, RIS =1 kTj = 150°C:
Integrated resistor in Vbb line
Tj = 25°C:
Tj = 150°C:
-Vbb
RON(rev)
Rbb
Values
Unit
min typ max
200 320 550
200 400 620
300 480 650
A
80 -- 300 µs
14 17 20 V
40 44 47 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
-- -- 16 V
-- 2.3 3.0 m
3.9 4.7
90 110 135
105 125 150
15) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
16 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
17) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
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