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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 3.0 A; IB = 0.79 A
IF = 3.0 A
ICM = 3.0 A; IB(end) = 0.67 A
TYP.
-
-
-
-
-
-
3.0
1.6
0.25
MAX.
1500
700
5
8
32
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1500
700
5
8
3
8
100
8
32
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.300

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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Rbe
VCEsat
VBEsat
hFE
hFE
VF
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
VEB = 7.5 V
IC = 3.0 A; IB = 0.79 A
IC = 3.0 A; IB = 0.79 A
IC = 0.3 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
IF = 3.0 A
MIN.
-
-
90
7.5
700
-
-
-
-
3.8
-
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- 180
13.5 -
--
mA
V
V
55 -
- 5.0
- 1.1
12 -
5.5 7.5
1.6 2.0
V
V
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc Collector capacitance
Switching times (line deflection
circuit)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 3.0 A; LC = 1.35 mH;
CFB = 9.4 nF; IB(end) = 0.67 A;
LB = 8 µH; -VBB = 4 V;
(-dIB/dt = 0.45 A/µs)
TYP. MAX. UNIT
47 - pF
4.5 6.0
0.25 0.5
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300

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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.3. Switching times test circuit.
h FE
100
10
Tj = 25 C
Tj = 125 C
5V
1V
1
0.01
Fig.4.
0.1 IC / A 1
10
Typical DC current gain. hFE = f (IC)
parameter VCE
VBESAT / V
1.2
1.1 Tj = 25 C
Tj = 125 C
1
0.9
0.8 IC/IB =
0.7 3
4
0.6 5
0.5
0.4
0.1
1
IC / A
10
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
VCESAT / V
1
0.9
0.8
0.7
IC/IB =
5
4
3
0.6
0.5 Tj = 25 C
0.4 Tj = 125 C
0.3
0.2
0.1
0
0.1
1 IC / A
10
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
September 1997
3
Rev 1.300

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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
VBESAT / V
1.2
Tj = 25 C
1.1 Tj = 125 C
1
0.9
IC =
0.8 4A
3A
2.5A
0.7
0.6
0 1 2 3 IB / A 4
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
VCESAT / V
10
IC = 2.5A
3A
4A
1
Tj = 25 C
Tj = 125 C
0.1
0.1
1
IB / A
10
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
Eoff / uJ
1000
IC = 3A
100 2.5A
ts, tf / us
10
9
ts
8
7
6
5
4
IC =
3
3A
2 2.5A
1 tf
0
0.1
1
IB / A
10
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Ths)
10
0.1
1
IB / A
10
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC
September 1997
4
Rev 1.300

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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
IC / A
100
IC / A
100
ICM max
10
IC max
= 0.01
II
tp =
10 us
1 Ptot max
100 us
I
0.1
1 ms
10 ms
DC
0.01
1
10 100 1000
VCE / V
Fig.12. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
ICM max
10
IC max
= 0.01
II
tp =
10 us
1
Ptot max
I
0.1
100 us
1 ms
10 ms
DC
0.01
1 10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
September 1997
5
Rev 1.300