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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1507AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4 A; IB = 0.95 A
IC = 4 A; IB = 0.8 A
f = 16kHz
ICsat = 4 A; f = 16kHz
TYP.
-
-
-
-
-
-
-
4
0.25
MAX.
1500
700
8
15
45
1.0
5.0
-
0.5
UNIT
V
V
A
A
W
V
V
A
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
3.7
-
UNIT
K/W
K/W
1 Turn-off current.
October 1997
1
Rev 1.100

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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1507AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
Collector-emitter saturation voltages
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4 A; IB = 0.8 A
VBEsat
Base-emitter saturation voltage
IC = 4 A; IB = 0.8 A
hFE DC current gain
hFE
IC = 100 mA; VCE = 5 V
IC = 4 A; VCE = 5 V
MIN.
-
-
-
7.5
700
-
-
-
5.0
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- 1.0
13.5 -
--
mA
V
V
- 5.0 V
- 1.1 V
17 -
7.0 9.0
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc Collector capacitance
Switching times (16 kHz line
deflection circuit)
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 4 A; IB(end) = 0.7 A; LB = 6 µH;
-VBB = 4 V
TYP. MAX. UNIT
68 - pF
5.0 6.0
0.25 0.5
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
October 1997
2
Rev 1.100

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Philips Semiconductors
Silicon Diffused Power Transistor
TRANSISTOR
IC DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB T.U.T.
Cfb
Fig.3. Switching times test circuit.
hFE
100
VCE = 1 V
10
Product specification
BU1507AX
BU2507AF/X
Ths = 25 C
Ths = 85 C
1
0.01 0.1
1
10 IC / A 100
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
100
VCE = 5 V
BU2507AF/X
Ths = 25 C
Ths = 85 C
10
1
0.01 0.1 1 10 IC / A 100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
VCEsat / V
10
Ths = 25 C
Ths = 85 C
1
0.1
BU2507AF/X
IC/IB = 3
IC/IB = 4
IC/IB = 5
0.01
0.1
1
10 IC / A
100
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
October 1997
3
Rev 1.100

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Philips Semiconductors
Silicon Diffused Power Transistor
VBEsat / V
1.2
1.1
1
BU2507AF/AX
Ths = 25 C
Ths = 85 C
IC = 4 A
0.9
IC = 3 A
0.8
0.7
0.6
0 0.5 1 1.5 IB / A 2
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
Ptot / W
10
BU2507AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
1
0.1
0 0.5 1 IB / A 1.5
Fig.8. Typical losses.
PTOT = f (IB); IC = 4 A; f = 16 kHz
2
ts/tf/ us
10
BU2507AF/AX/Df/DX85ts/tf
8
6
4
2
0
0 0.5 1 1.5 IB / A 2
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); IC = 4.0 A; Tj = 85˚C; f = 16 kHz
Product specification
BU1507AX
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100PD/PD 25˚C = f (Tmb)
Zth / K/W
10
BU2507AF/X/DF/X
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01 D = 0
PD tp
D = tp
T
Tt
0.001
1E-06
1E-4
10E-2
1E+00
t/s
Fig.11. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
October 1997
4
Rev 1.100

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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1507AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
1.0 (2x)
0.9
0.7
1.3
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.100