UN212X.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 UN212X 데이타시트 다운로드

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Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
s Resistance by Part Number
Marking Symbol (R1)
q UN2121
7A
2.2k
q UN2122
7B
4.7k
q UN2123
7C
10k
q UN2124
7D
2.2k
q UN212X
7I
0.27k
q UN212Y
7Y
3.1k
(R2)
2.2k
4.7k
10k
10k
5k
4.6k
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–500
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
1

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Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN212X
Collector cutoff current
UN212X
Emitter
cutoff
current
UN2121
UN2122/212X/212Y
UN2123/2124
ICBO
ICBO
ICEO
ICEO
IEBO
VCB = –50V, IE = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
Collector to base voltage
Forward
current
transfer
ratio
UN2121
UN2122/212Y
UN2123/2124
UN212X
VCBO
IC = –10µA, IE = 0
hFE VCE = –10V, IC = –100mA
–50
40
50
60
20
Collector to emitter saturation voltage
UN212X
UN212Y
Output voltage high level
Output voltage low level
Transition frequency
UN2121
VCE(sat)
VCE(sat)
VCE(sat)
VOH
VOL
fT
IC = –100mA, IB = –5mA
IC = –10mA, IB = – 0.3mA
IC = –50mA, IB = –5mA
VCC = –5V, VB = – 0.5V, RL = 500
VCC = –5V, VB = –3.5V, RL = 500
VCB = –10V, IE = 50mA, f = 200MHz
–4.9
Input
resis-
tance
UN2122
UN2123
UN212X
R1
(–30%)
UN212Y
Resistance ratio
0.8
UN2124
UN212X
R1/R2
UN212Y
typ max
–1
– 0.1
–1
– 0.5
–5
–2
–1
– 0.25
– 0.25
– 0.15
200
2.2
4.7
10
0.27
3.1
1.0
0.22
0.054
0.67
– 0.2
(+30%)
1.2
Unit
µA
µA
mA
V
V
V
V
MHz
k
Common characteristics chart
PT — Ta
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2

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Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Characteristics charts of UN2121
– 240
– 200
IC — VCE
Ta=25˚C
–160
–120
– 80
– 40
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
100 25˚C
–25˚C
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
12
f=1MHz
IE=0
Ta=25˚C
10
8
6
4
2
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN2122
– 300
IC — VCE
Ta=25˚C
– 250
– 200
–150
–100
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
–50 –0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
160
VCE= –10V
Ta=75˚C
120
25˚C
80
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
3

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Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN2123
– 240
IC — VCE
Ta=25˚C
– 200
–160
–120
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
–80 –0.4mA
– 0.3mA
–40 –0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
200
VCE= –10V
Ta=75˚C
25˚C
150
100 –25˚C
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
4

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Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Characteristics charts of UN2124
– 300
IC — VCE
Ta=25˚C
– 250
– 200
–150
–100
– 50
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
400
VCE= –10V
350
300
250
Ta=75˚C
200 25˚C
150 –25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN212X
– 240
IC — VCE
Ta=25˚C
– 200
–160
–120
– 80
IB= –1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
–40 –0.4mA
– 0.2mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
240
VCE= –10V
200
160
Ta=75˚C
120
25˚C
80
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
5