NPN SILICON RF TWIN TRANSISTOR
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 2 × 2SC5006)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to
• Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 transistors (2 × 2SC5006)
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPA821TC. Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Total Power Dissipation
200 in 1 element
230 in 2 elements
−65 to 150
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.
Caution Electro-static sensitive devices.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14552EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan