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PRELIMINARY DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA843TC
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Flat-lead 6-pin thin-type ultra super minimold package
• 2 different built-in transistors (2SC5603, 2SC5600)
• Low voltage operation
Q1: Built-in high gain transistor
fT = 13.5 GHz, S21e2 = 10.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 5.0 GHz, S21e2 = 4.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
3-pin thin-type ultra super minimold part No.
Q1
2SC5603
Q2
2SC5600
ORDERING INFORMATION
Part Number
µPA843TC
µPA843TC-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14679EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999, 2000

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µPA843TC
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
Q1 Q2
15 9
6 5.5
2 1.5
35 100
200 in 1 element
230 in 2 elements
150
65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy substrate
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO
h Note 1
FE
VEB = 1 V, IC = 0 mA
VCE = 1 V, IC = 5 mA
fT VCE = 1 V, IC = 5 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
NF VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
MIN.
60
12
8.5
TYP.
90
13.5
10
1.3
MAX.
200
200
120
2.5
Unit
nA
nA
GHz
dB
dB
0.25 0.5 pF
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO
h Note 1
FE
VEB = 1 V, IC = 0 mA
VCE = 1 V, IC = 5 mA
fT VCE = 1 V, IC = 5 mA, f = 2 GHz
fT VCE = 1 V, IC = 15 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
NF VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
MIN.
100
3.5
5.5
3.5
4.5
TYP.
5.0
6.5
4.0
5.5
1.5
MAX.
600
600
160
2.5
Unit
nA
nA
GHz
GHz
dB
dB
dB
0.8 1.0 pF
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2 %
2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
2 Preliminary Data Sheet P14679EJ2V0DS00

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hFE CLASSIFICATION
Rank
Marking
hFE Value of Q1
hFE Value of Q2
FB
2C
60 to 120
100 to 160
µPA843TC
Preliminary Data Sheet P14679EJ2V0DS00
3

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µPA843TC
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy Board
(1.08 cm2 × 1.0 mm (t) )
250
230 2 Elements in total
200
Per Element
150
100
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
Q2
Q1
50
0 25 50 75 100 125 150
Ambient Temperature TA (˚C)
0.1
0.1
1.0 10.0
Collector to Base Voltage VCB (V)
100.0
DC Characteristics
Q1
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
VCE = 1 V
30
20
10
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 1 V
40
30
20
10
0
0.2 0.4 0.6 0.8
1
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
IB = 460 µA
IB 50 µA step
260 µA
30
0
0.2 0.4 0.6 0.8
1
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
120
IB 50 µA step
IB = 560 µA
100
260 µA
80
20 60
10
0
4
40
10 µA
2468
Collector to Emitter Voltage VCE (V)
10
20
10 µA
0 2 468
Collector to Emitter Voltage VCE (V)
Preliminary Data Sheet P14679EJ2V0DS00

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DC Characteristics
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
VCE = 1 V
100
µPA843TC
1 000
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
100
10 10
1
0.1 1
10 100
Collector Current IC (mA)
fT Characteristics
Q1
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
18
f = 2 GHz
VCE = 1 V
16
14
12
10
8
6
4
2
0
1 10 100
Collector Current IC (mA)
Gain Characteristics Q1
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
20
f = 2 GHz
18 VCE = 1 V
16
14 MSG.
MAG.
12
10
|S21e|2
8
6
4
1 10 100
Collector Current IC (mA)
1
0.1 1
10 100
Collector Current IC (mA)
Q2
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
12
f = 2 GHz
VCE = 1 V
10
8
6
4
2
0
1 10 100
Collector Current IC (mA)
Q2
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
12
10
MSG.
8
MAG.
f = 2 GHz
VCE = 1 V
6
|S21e|2
4
2
0
1 10 100
Collector Current IC (mA)
Preliminary Data Sheet P14679EJ2V0DS00
5