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NEC's NPN SILICON
RF TWIN TRANSISTOR
UPA861TD
FEATURES
• LOW VOLTAGE, LOW CURRENT OPERATION
• LOW CAPACITANCE FOR WIDE TUNING RANGE
• SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE:
Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
• IDEAL FOR >3 GHz OSCILLATORS
DESCRIPTION
NEC's UPA861TD contains one NE894 and one NE687 NPN
high frequency silicon bipolar chip. The NE894 is an excellent
oscillator chip, featuring high fT and low current, low voltage
operation. The NE687 is an excellent buffer transistor, featur-
ing low noise and high gain. NEC's new ultra small TD package
is ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TD
(TOP VIEW)
1.0±0.05
0.8 +0.07
-0.05
(Top View)
C1 1 Q1
6 B1
E1 2
5 E2
C2 3 Q2
4 B2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA861TD
TD
SYMBOLS
ICBO
IEBO
hFE
fT
Cre
|S21E|2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain1 at VCE = 1 V, IC = 10 mA
Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
UNITS
nA
nA
GHz
pF
dB
dB
MIN
70
10.0
7.0
TYP
110
12.0
0.4
9.0
1.5
MAX
100
100
140
0.8
2.0
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE DC Current Gain1 at VCE = 1 V, IC = 5 mA
nA 100
50 75 100
fT
Cre
|S21E|2E|2
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz
Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz
GHz
pF
dB
17.0 20.0
0.22
11.0 13.0
0.30
NF Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt dB
1.4 2.5
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories

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UPA861TD
ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
Q1 Q2
VCBO Collector to Base Voltage
V
59
VCEO Collector to Emitter Voltage V
33
VEBO Emitter to Base Voltage
V 2 1.5
IC Collector Current
mA 30 35
PT Total Power Dissipation1 mW 90 105
195 Total
TJ Junction Temperature
°C 150 150
TSTG Storage Temperature
°C -65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
ORDERING INFORMATION
PART NUMBER
UPA861TD-T3
QUANTITY
10K Pcs./Reel
PACKAGING
Tape & Reel
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0mm (t))
250
2 Elements in total
200
195
150
105 Q2
100
90
Q1
50
0 25 50 75 100 125 150
Ambient Temperature, TA (ºC)
Q1
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0 12345
Collector to Base Voltage, VCB (V)
Q2
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHz
0.4
0.3
0.2
0.1
0 2 4 6 8 10
Collector to Base Voltage, VCB (V)

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TYPICAL CHARACTERISTICS, cont. (TA = 25°C, unless otherwise specified)
UPA861TD
Q1
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, VBE (V)
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage, VBE (V)
1.0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
1
0.1
0.01
0.001
0.0001
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
400 µA
30
IB : 50 µA step
300 µA
25
20 200 µA
15
10 100 µA
5
IB = 50 µA
0 1234
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
500 µA 450 µA
400 µA
350 µA
30
300 µA
250 µA
20 200 µA
150 µA
10 100 µA
IB = 50 µA
0 1234
Collector to Emitter Voltage, VCE (V)

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UPA861TD
TYPICAL CHARACTERISTICS, cont. (TA = 25°C, unless otherwise specified)
1 000
Q1
DC VOLTAGE vs.
COLLECTOR CURRENT
VCE = 1 V
1 000
Q2
DC VOLTAGE vs.
COLLECTOR CURRENT
VCE = 1 V
100 100
10
0.1
1 10
Collector Current, IC (mA)
100
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
16
VCE = 1 V
f = 2 GHz
14
12
10
8
6
4
2
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 1 V
IC = 10 mA
30
25 MSG
MAG
20
15
10
|S21e|2
5
0
0.1 1
10
Frequency, f (GHz)
10
0.1
1 10
Collector Current, IC (mA)
100
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
25
VCE = 1 V
f = 2 GHz
20
15
10
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
40
VCE = 1 V
35 IC = 20 mA
30 MSG
MAG
25
20
15
10 |S21e|2
5
0
0.1 1 10
Frequency, f (GHz)

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TYPICAL CHARACTERISTICS, cont. (TA = 25°C, unless otherwise specified)
UPA861TD
Q1
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
20
VCE = 1 V
f = 2 GHz
16
MSG
12
MAG
|S21e|2
8
4
0
1 10 100
Collector Current, IC (mA)
Q2
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
20
VCE = 1 V
16 MSG MAG
f = 2 GHz
12 |S21e|2
8
4
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 4 GHz
8
MAG
6
4
|S21e|2
2
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
20
VCE = 1 V
f = 4 GHz
16
12
MSG MAG
8
|S21e|2
4
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 4 GHz
8
MAG
6
|S21e|2
4
2
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 4 GHz
8
6 MSG
4
|S21e|2
2
0
1 10 100
Collector Current, IC (mA)