ZNBG3210Q20.pdf 데이터시트 (총 16 페이지) - 파일 다운로드 ZNBG3210Q20 데이타시트 다운로드

No Preview Available !

FET BIAS CONTROLLER WITH POLARISATION ZNBG3210
SWITCH AND TONE DETECTION
ZNBG3211
ISSUE 2 - FEBRUARY 2000
DEVICE DESCRIPTION
The ZNBG series of devices are designed to
meet the bias requirements of GaAs and
HEMT FETs commonly used in satellite
receiver LNBs, PMR cellular telephones etc.
with a minimum of external components.
With the addition of two capacitors and a
resistor the devices provide drain voltage and
current control for three external grounded
source FETs, generating the regulated
negative rail required for FET gate biasing
whilst operating from a single supply. This
negative bias, at -3 volts, can also be used to
supply other external circuits.
The ZNBG3210/11 includes bias circuits to
drive up to three external FETs. A control
input to the device selects either one of two
FETs as operational using 0V gate switching
methodology, the third FET is permanently
active. This feature is particularly used as an
LNB polarisation switch. Also specific to LNB
applications is the enhanced 22kHz tone
detection and logic output feature which is
used to enable high and low band frequency
switching. The detector has been specifically
designed to reject inerference such as low
frequency signals and DiSEqCtone bursts
- without the use of additional external
components.
Drain current setting of the ZNBG3210/11 is
user selectable over the range 0 to 15mA, this
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to three FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator
requires only 2 external capacitors
Choice in drain voltage
Wide supply voltage range
Polarisation switch for LNBs -
supporting zero volt gate switching
topology.
22kHz tone detection for band switching
Compliant with ASTRA control
specifications
QSOP surface mount package
is achieved with the addition of a single
resistor. The series also offers the choice of
FET drain voltage, the 3210 gives 2.2 volts
drain whilst the 3211 gives 2 volts.
These devices are unconditionally stable
over the full working temperature with the
FETs in place, subject to the inclusion of the
recommended gate and drain capacitors.
These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused
drain and gate connections can be left open
circuit without affecting operation of the
remaining bias circuits.
In order to protect the external FETs the
circuits have been designed to ensure that,
under any conditions including power
up/down transients, the gate drive from the
bias circuits cannot exceed the range -3.5V
to 1V. Furthermore if the negative rail
experiences a fault condition, such as
overload or short circuit, the drain supply to
the FETs will shut down avoiding excessive
current flow.
The ZNBG3210/11 are available in QSOP20
for the minimum in device size. Device
operating temperature is -40 to 70°C to suit
a wide range of environmental conditions.
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Cellular telephones
67-1

No Preview Available !

ZNBG3210
ZNBG3211
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
-0.6V to 12V
Supply Current
100mA
Input Voltage (VPOL)
Drain Current (per FET)
(set by RCAL)
Operating Temperature
25V Continuous
0 to 15mA
-40 to 70°C
Storage Temperature
-50 to 85°C
Power Dissipation (Tamb= 25°C)
QSOP20
500mW
ELECTRICAL CHARACTERISTICS. TEST CONDITIONS
(Unless otherwise stated):Tamb= 25°C,VCC=5V,ID=10mA (RCAL=33k)
SYMBOL PARAMETER CONDITIONS
LIMITS
UNITS
MIN. TYP. MAX.
VCC
ICC
VSUB
END
ENG
fO
Supply Voltage
5 10 V
Supply Current
ID1 to ID3=0
ID1=0,ID2 to ID3=10mA, VPOL=14V
ID2=0,ID1 to ID3=10mA, VPOL=15.5V
ID1 to ID3=0, ILB=10mA
ID1 to ID3=0, IHB=10mA
6 15 mA
25 35 mA
25 35 mA
16 25 mA
16 25 mA
Substrate
Voltage
(Internally generated) ISUB=0
-3.5 -3.0 -2.5 V
ISUB=-200µA
-2.4 V
Output Noise
Drain Voltage
Gate Voltage
CG=4.7nF, CD=10nF
CG=4.7nF, CD=10nF
0.02 Vpkpk
0.005 Vpkpk
Oscillator
Frequency
200 350 800 kHz
67-2

No Preview Available !

SYMBOL PARAMETER CONDITIONS
GATE CHARACTERISTICS
IGO Output Current
Range
IDx VPOL
(mA) (V)
IGOx
(µA)
VG1O
VG1L
VG1H
Output Voltage
Gate 1 Off
Low
High
ID1=0 VPOL=14 IGO1=0
ID1=12 VPOL=15.5 IGO1=-10
ID1=8 VPOL=15.5 IGO1=0
VG2O
VG2L
VG2H
Output Voltage
Gate 2 Off
Low
High
ID2=0 VPOL=15.5 IGO2=0
ID2=12 VPOL=14 IGO2=-10
ID2=8 VPOL=14 IGO2=0
Output Voltage
VG3L
VG3H
Gate 3
Low ID3=12
High ID3=8
DRAIN CHARACTERISTICS
IGO3=-10
IGO3=0
ID
IDV
IDT
VD1
VD2
VD3
VDV
VDT
IL1
IL2
Current
Current Change
with VCC VCC= 5 to 10V
with Tj Tj=-40 to +70°C
Drain 1 Voltage:
High
ZNBG3210
ZNBG3211
ID1=10mA, VPOL=15.5V
ID1=10mA, VPOL=15.5V
Drain 2 Voltage:
High
ZNBG3210
ZNBG3211
ID2=10mA, VPOL=14V
ID2=10mA, VPOL=14V
Drain 3 Voltage:
High
ZNBG3210
ZNBG3211
ID3=10mA
ID3=10mA
Voltage Change
with VCC VCC= 5 to 10V
with Tj Tj=-40 to +70°C
Leakage Current
Drain 1 VD1=0.5V, VPOL=14V
Drain 2 VD2=0.5V, VPOL=15.5V
67-3
ZNBG3210
ZNBG3211
LIMITS
UNITS
MIN. TYP. MAX.
-30 2000 µA
-0.05 0
-2.7 -2.4
0.4 0.75
0.05
-2.0
1.0
V
V
V
-0.05 0
-2.7 -2.4
0.4 0.75
0.05
-2.0
1.0
V
V
V
-3.5 -2.9 -2.0 V
0.4 0.75 1.0 V
8 10 12 mA
0.5
0.05
%/V
%/°C
2.0 2.2 2.4 V
1.8 2.0 2.2 V
2.0 2.2 2.4 V
1.8 2.0 2.2 V
2.0 2.2 2.4 V
1.8 2.0 2.2 V
0.5 %/V
50 ppm
10 µA
10 µA

No Preview Available !

ZNBG3210
ZNBG3211
SYMBOL PARAMETER CONDITIONS
LIMITS
UNITS
TONE DETECTION CHARACTERISTICS
MIN. TYP. MAX.
IB
VOUT
IOUT
Filter Amplifier
Input Bias Current RF1=150k
Output Voltage 5 RF1=150k
Output Current 5 VOUT=1.96V, VFIN=2.1V
GV Voltage Gain f=22kHz,VIN=1mV
Rejection
fR8
Frequency
V(AC)in=1V p/p sq.w6
VLOV
Output Stage
LOV Volt. Range IL=50mA(LB or HB)
ILOV
VLBL
VLBH
LOV Bias Current
LB Output Low
LB Output High
VLOV=0
VLOV=0 IL=-10µA
VLOV=3V IL=0
VLOV=0 IL=10mA
VLOV=3V IL=50mA
Enabled 6
Enabled 7
Disabled 6
Disabled 7
VHBL
VHBH
HB Output Low
HB Output High
VLOV=0 IL=-10µA
VLOV=3V IL=0
VLOV=0 IL=10mA
VLOV=3V IL=50mA
Disabled 6
Disabled 7
Enabled 6
Enabled 7
POLARITY SWITCH CHARACTERISTICS
0.02 0.07 0.25 µA
1.75 1.95 2.05 V
400 520 650 µA
46 dB
1.0 7.5
kHz
-0.5 VCC-1.8 V
0.02 0.15 1.0 µA
-3.5 -2.75 -2.5 V
-0.01 0
0.01 V
-0.025 0
2.9 3.0
0.025 V
3.1 V
-3.5 -2.75 -2.5 V
-0.01 0
0.01 V
-0.025 0
2.9 3.0
0.025 V
3.1 V
IPOL Input Current VPOL=25V (Applied via RPOL=10kΩ) 10 20 40 µA
VTPOL
Threshold
Voltage
14
VPOL=25V (Applied via RPOL=10kΩ)
14.75 15.5 V
TSPOL
Switching Speed VPOL=25V (Applied via RPOL=10kΩ)
100 ms
NOTES:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB, of
47nF are required for this purpose.
2. The characteristics are measured using an external reference resistor RCAL of value 33k wired from pins RCAL to ground.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all outputs. CG, 4.7nF, are connected between
gate outputs and ground, CD, 10nF, are connected between drain outputs and ground.
5 . These parameters are linearly related to VCC
6. These parameters are measured using Test Circuit 1
7. These parameters are measured using Test Circuit 2
8. The ZNBG32 series will also reject DiSEqCand other common switching bursts.
67-4

No Preview Available !

TEST CIRCUIT 1
ZNBG3210
ZNBG3211
TEST CIRCUIT 2
V2 Characteristics
Type
AC source
Frequency 22kHz
Voltage
350mV p/p enabled
100mV p/p disabled
V2 Characteristics
Type
AC source
Frequency 22kHz
Voltage
350mV p/p enabled
100mV p/p disabled
67-5