IBB110PTR.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 IBB110PTR 데이타시트 다운로드

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IBB110P
Integrated Telecom Circuits
Load Voltage
Load Current
Max RON
IBB110P
350
100
35
Units
V
mA
Description
The IBB110P Multifunction Telecom switch combines two
350V Form B relays and one optocoupler in a single
package. The relay uses optically coupled MOSFET tech-
nology to provide 1500V of input to output isolation. The
efficient MOSFET switches and photovoltaic die use
Clare’s patented OptoMOS architecture. The optically
Features
Three Functions in One Package
Small 16 Pin SOIC Package (PCMCIA Compatible)
Bi-Directional Current Sensing
Bi-Directional Current Switching
3750VRMS Input/Output Isolation
FCC Compatible
No EMI/RFI Generation
Machine Insertable, Wave Solderable
Tape & Reel Versions Available
coupled input uses highly efficient GaAIAs infrared LEDs.
IBB110P’s allow telecom circuit designers to combine
three discrete functions in a single component. The The
IBB110P small package uses less space than traditional
discrete component solutions.
Approvals
UL Recognized: File Number E76270
CSA Certified: File Number LR 43639-12
VDE Compatible
BSI Certified:
BS EN 60950:1992 (BS7002:1992)
Certificate #:7969
Applications
Telecommunications
Telecom Switching
Tip/Ring Circuits
Modem Switching (Laptop, Notebook, Pocket Size)
Hookswitch
Dial Pulsing
Ground Start
Ringer Injection
Instrumentation
Multiplexers
Data Acquisition
Electronic Switching
BS EN 41003:1993
Certificate #:7969
Ordering Information
Part #
IBB110P
IBB110PTR
Description
16 Pin SOIC (50/Tube)
16 Pin SOIC (1000/Reel)
Pin Configuration
IBB110P Pinout
1
(N/C)
16
2 15 (Form B)
I/O Subsystems
Meters (Watt-Hour, Water, Gas)
Medical Equipment-Patient/Equipment Isolation
Security
Aerospace
Switching Characteristics of
Normally Open (Form A) Devices
CONTROL
10ms
3
4
5
6
14
13
12 (Form B)
11
Industrial Controls
+90%
LOAD 10%+
10%+
TON TOFF
7
8
(N/C)
10
9
Switching Characteristics of
Normally Closed (Form B) Devices
CONTROL
10ms
+90%
+10%
TOFF
+90%
TON
1. (N/C)
2. + LED - Form B Relay #1
3. LED - Form B Relay #1
4. + LED - Form B Relay #2
5. LED - Form B Relay #2
6. Emitter - Phototransistor
7. Collector - Phototransistor
8. (N/C)
9. LED - Phototransistor +/
10. LED - Phototransistor /+
11. Output - Form B Relay #2
12. Common Source Relay #2
13. Output - Form B Relay #2
14. Output - Form B Relay #1
15. Common Source Relay #1
16. Output - Form B Relay #1
DS-IBB110P-R2
www.clare.com
1

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IBB110P
Absolute Maximum Ratings (@ 25˚ C)
Parameter
Total Package Dissipation
Isolation Voltage
Input to Output
Operational Temperature
Storage Temperature
Soldering Temperature
(10 Seconds Max.)
1 Above 25˚ derate linerity 1.67mw/˚C
Min Typ Max Units
- - 11 W
3750
-40
-40
-
- - VRMS
- +85 °C
- +125 °C
- +220 °C
Absolute Maximum Ratings are stress ratings. Stresses
in excess of these ratings can cause permanent damage
to the device. Functional operation of the device at these
or any other conditions beyond those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to the absolute maximum ratings
for an extended period may degrade the device and effect
its reliability.
Electrical Characteristics
Parameter
Relay Portion
Output Characteristics @ 25°C
Load Voltage (Peak)
Load Current (Continuous)
Peak Load Current
On-Resistance
Off-State Leakage Current
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Relay Portion
Input Characteristics @ 25°C
Input Control Current
Input Dropout Current
Input Voltage Drop
Reverse Input Voltage
Reverse Input Current
Detector Portion
Output Characteristics @ 25°C
Phototransistor Blocking Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Detector Portion
Input Characteristics @ 25°C
Input Control Current
Input Voltage Drop
Input Current
(Detector must be off)
Input to Output Capacitance
Input to Output Isolation
Conditions
Symbol Min
IL= 1µA
-
10ms
IL=100mA
VL=350V; TJ=25°C
IF=5mA, VL =10V
IF=5mA, VL=10V
VL=50V, f=1MHz
VL
IL
ILPK
RON
ILEAK
TON
TOFF
-
-
-
-
-
-
-
-
-
IL=100mA
IL=1mA
IF=5mA
-
VR=5V
IF 5
IF 0.4
VF 0.9
VR -
IR -
IC =10µA
VCE=5V, IF =0mA
IC=2mA, IF=16mA
IF=6mA, VCE=0.5V
BVCEO
ICEO
VSAT
CTR
20
-
-
33
IC=2mA,VCE=0.5V
IF=5mA
IC=1µA, VCE=5V
IF
ICEO
-
6
0.9
5
VL=50V, f=1MHz
-
CI/O -
VI/O 3750
Typ
-
-
-
-
-
-
-
25
-
-
1.2
-
-
50
50
0.3
-
2
1.2
25
3
-
Max Units
350 V
100 mA
350 mA
35
1 µA
3 ms
3 ms
- pF
50 mA
- mA
1.4 V
5V
10 µA
-V
500 nA
0.5 V
-%
- mA
1.4 V
- µA
- pF
- VRMS
2 www.clare.com
Rev. 2

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IBB110P
PERFORMANCE DATA*
IBB110P
Typical LED Forward Voltage Drop
(N=50 Ambient Temperature = 25°C; IF = 5mADC)
35
30
25
20
15
10
5
0
1.17 1.19 1.21 1.23 1.25
LED Forward Voltage Drop (V)
IBB110P
Typical On-Resistance Distribution
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC, IF=5mADC)
25
20
15
10
5
0
25.5 26.5 27.5 28.5 29.5 30.5 31.5
On-Resistance ()
IBB110P
Typical IF for Switch Operation
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC)
25
20
15
10
5
0
0.33 0.55 0.77 0.99 1.21 1.43 1.65
LED Current (mA)
IBB110P
Typical Turn-Off Time
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC; IF = 5mADC)
25
20
15
10
5
0
0.27 0.45 0.63 0.81 0.99 1.17 1.35
Turn-Off (ms)
IBB110P
Typical IF for Switch Dropout
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC)
25
20
15
10
5
0
0.11 0.33 0.55 0.77 0.99 1.21 1.43
LED Current (mA)
IBB110P
Typical Load Current vs. Temperature
180
160
140
120
100
80 5mA
60
40
20
0
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
IBB110P
Typical Blocking Voltage vs. Temperature
410
405
400
395
390
385
380
-40 -20
0 20 40 60
Temperature (°C)
80 100
IBB110P
Typical Turn-On vs. Temperature
(Load Current = 100mADC)
0.6
0.5
0.4
0.3
0.2
0.1
0
-40 -20
0 20 40 60
Temperature (°C)
5mA
80 100
IBB110P
Typical Blocking Voltage Distribution
(N=50 Ambient Temperature = 25°C)
25
20
15
10
5
0
357.5 372.5 387.5 402.5 417.5 432.5 443.5
Blocking Voltage (V)
IBB110P
Typical Turn-On Time
(N=50 Ambient Temperature = 25°C)
(Load Current = 100mADC; IF = 5mADC)
25
20
15
10
5
0
0.09 0.27 0.45 0.63 0.81 0.99 1.17
Turn-On (ms)
IAB110P
Typical Leakage vs. Temperature
(Measured across Pins 14 & 16 or 11 & 13)
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
-40 -20
0
20 40 60
80 100
Temperature (°C)
0.900
0.800
IBB110P
Typical Turn-Off vs. Temperature
(Load Current = 100mADC)
5mA
0.700
0.600
0.500
10mA
0.400
0.300
20mA
0.200
0.100
0
-40 -20
0
20 40 60
80 100
Temperature (°C)
The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact
our application department.
Rev. 2
3

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IBB110P
PERFORMANCE DATA*
IBB110P
Typical LED Forward Voltage Drop
vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
-40 -20
50mA
30mA
20mA
10mA
5mA
0 20 40 60 80 100 120
Temperature (°C)
IBB110P
Typical Turn-On vs. LED Forward Current
(Load Current = 100mADC)
0.30
0.25
0.20
0.15
0.10
0.05
0
0 5 10 15 20 25 30 35 40 45 50
LED Forward Current (mA)
IBB110P
Typical Turn-Off vs. LED Forward Current
(Load Current = 100mADC)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 5 10 15 20 25 30 35 40 45 50
LED Forward Current (mA)
IBB110P
Typical On-Resistance vs. Temperature
(Load Current = 100mADC; IF = 5mADC)
60
50
40
30
20
10
0
-40 -20
0 20 40 60
Temperature (°C)
80 100
IBB110P
Typical IF for Switch Operation vs. Temperature
(Load Current = 100mADC)
3.000
2.500
2.000
1.500
1.000
0.500
0
-40 -20
0 20 40 60
Temperature (°C)
80 100
IBB110P
Typical IF for Switch Dropout vs. Temperature
(Load Current = 100mADC)
3.000
2.500
2.000
1.500
1.000
0.500
0
-40 -20
0 20 40 60
Temperature (°C)
80 100
IBB110P
Typical Load Current vs. Load Voltage
(Ambient Temperature = 25°C; IF = 5mADC)
100
80
60
40
20
0
-20
-40
-60
-80
-100
-5 -4 -3 -2 -1 0 1 2 3 4 5
Load Voltage (V)
IBB110P
Energy Rating Curve
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10µs 100µs 1ms 10ms 100ms 1s 10s 100s
Time
IBB110P
Typical Normalized CTR vs. Forward Current
(VCE = 0.5V)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 2 4 6 8 10 12 14 16 18 20
IF (mA)
IBB110P
Typical Normalized CTR vs. Temperature
(VCE = 0.5V)
8
7
6
5
4
3 1mA
2
2mA
5mA
1
10mA
15mA
0 20mA
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
IBB110P
Typical Collector Current vs. Forward Current
(VCE = 0.5V)
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
IF (mA)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please contact
our application department.
4
www.clare.com
Rev. 2

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IBB110P
Mechanical Dimensions
16 Pin SOIC (PSuffix)
10.160 ± .051
(.400 ± .002)
1.981 TYP.
(.078)
7.493 ± .051
(.295 ± .002)
1.270 TYP.
(.050)
2.108 MAX.
(.083)
1.016
(.040)
7.493 ± .127
(.295 ± .005)
.254
(.010)
10.363 ± .127
(.408 ± .005)
.406 TYP.
(.016)
8.890 TYP.
(.350)
PC Board Pattern
(Top View)
1.270
(.050)
1.193
(.047)
.787
(.031)
9.728 ± .051
(.383 ± .002)
Tape and Reel Packaging for 16 Pin SOIC Package
330.2 DIA.
(13.00)
Top Cover
Tape Thickness
.102 MAX.
(.004)
6.731 MAX.
(.265)
1.753 ± .102
(.069 ± .004)
.406 MAX.
(.016)
7.493 ± .102
(.295 ± .004)
12.090
(.476)
3.175
(.125)
2.007 ± .102 1.498 ± .102 3.987 ± .102
(.079 ± .004) (.059 ± .004) (.157 ± .004)
1 16
16.002 ± .305
(.630 ± .012)
10.693 ± .025
(.421 ± .001)
Embossed Carrier
Embossment
Top Cover
Tape
.050R TYP.
11.989 ± .102
(.472 ± .004)
10.897 ± .025 1.549 ± .102
(.429 ± .001) (.061 ± .004)
User Direction of Feed
Dimensions
mm
(inches)
Rev. 2
5