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2003
3 Watt - 28 Volts, Class C
Microwave 2000 MHz
GENERAL DESCRIPTION
The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class
C, RF output power at 2000 MHz. Gold metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor is
uses a fully hermetic High Temperature solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
12 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic Collector Current
50 Volts
3.5 Volts
0.5 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55BT-1, Style 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2000 MHz
Vcb = 28 Volts
Po = 3.0 Watts
As Above
F = 2 GHz, Po = 3 W
MIN
3.0
8.1
TYP
8.5
40
MAX UNITS
Watt
0.47 Watt
dB
%
30:1
BVces
BVcbo
BVebo
Icbo
hFE
Cob
θjc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ic = 1 mA
Ie = 1.0 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 100 mA
F =1 MHz, Vcb = 28 V
Issue August 1996
50 Volts
45 Volts
3.5 Volts
500 µA
10
5.0 pF
15 oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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2003
August 1996

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