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2SK2469-01MR
FAP-II Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
300V 1Ω 5A 30W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
300
Drain-Gate-Voltage(RGS=20K)
V DGR
300
Continous Drain Current
ID 5
Pulsed Drain Current
I D(puls)
20
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 30
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=300V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=2,5A
VGS=10V
Forward Transconductance
g fs
ID=2,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=150V
t r ID=5A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
t f RGS=10
Avalanche Capability
I AV
L=100µH
Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
300
3,5
1,5
5
Typ. Max.
4,0 4,5
10 500
0,2 1,0
10 100
0,6 1,0
3
500 750
120 180
60 90
10 15
20 30
30 45
15 25
1,1 1,7
180
1,5
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
4,17 °C/W

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N-channel MOS-FET
300V 1Ω 5A 30W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2469-01MR
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=2,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source On-State-Resistance
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Transconductance
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
4
5
VGS [V]
Gate Threshold Voltage
VGS(th)=f(Tch); ID=1mA; VDS=VGS
6
ID [A]
Typical Capacitances
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg); ID=5A
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test
8
↑↑
9
VDS [V]
Power Dissipation
PD=f(Tc)
10
Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch-c=f(t) parameter:D=t/T
Tc [°C]
VDS [V]
t [s]
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98