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VISHAY
LS103A / 103B / 103C
Vishay Semiconductors
Small Signal Schottky Barrier Diodes
Features
• Integrated protection ring against static discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
Applications
HF-Detector
Protection circuit
Small battery charger
AC-DC / DC-DC converters
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
9612009
Parts Table
Part
LS103A
LS103B
LS103C
Type differentiation
VR = 40 V, VF @ IF 20 mA max. 0.37 V
VR = 30 V, VF @ IF 20 mA max. 0.37 V
VR = 20 V, VF @ IF 20 mA max. 0.37 V
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Peak forward surge current
Power dissipation
tp = 300 µs, square pulse
l = 4 mm, TL = constant
Ordering code
LS103A-GS18 or LS103A-GS08
LS103B-GS18 or LS103B-GS08
LS103C-GS18 or LS103C-GS08
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Part
LS103A
LS103B
LS103C
Symbol
VR
VR
VR
IFSM
Ptot
Value
40
30
20
15
400
Unit
V
V
V
A
mW
Document Number 85631
Rev. 1.2, 22-Apr-04
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LS103A / 103B / 103C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Junction temperature
l = 4mm, TL = constant
Storage temperature range
VISHAY
Symbol
RthJA
Tj
Tstg
Value
250
125
- 65 to + 150
Unit
K/W
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Breakdown Voltage IR = 10 µA
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
VR = 30 V
VR = 20 V
VR = 10 V
IF = 20 mA
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = IR = 50 to 200 mA,
recover to 0.1 IR
Part Symbol Min Typ. Max
LS103A V(BR)R
40
LS103B V(BR)R
30
LS103C V(BR)R
20
LS103A
IR
5
LS103B
IR
5
LS103C
IR
5
VF 0.37
VF 0.6
CD 50
trr 10
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10001.000
100.100000
10.01000
1.0010
0.100.10
00.0.0110
0.001
0
16765
100 200 300 400 500 600 700 800 900 1000
V F – Forward Voltage ( mV )
Fig. 1 Forward Current vs. Forward Voltage
5
4
3
2
1
16766
0
0.0
0.5 1.0 1.5
VF – Forward Voltage ( V )
2.0
Fig. 2 Forward Current vs. Forward Voltage
Unit
V
V
V
µA
µA
µA
V
V
pF
ns
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Document Number 85631
Rev. 1.2, 22-Apr-04

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VISHAY
10000
1000
100
10
16767
1
0
20 40 60 80 100 120 140 160
Tj – Junction Temperature ( °C )
Fig. 3 Reverse Current vs. Junction Temperature
30
f=1MHz
25
20
15
10
5
16768
0
0
5 10 15 20 25
VR – Reverse Voltage ( V )
30
Fig. 4 Diode Capacitance vs. Reverse Voltage
25
20
15
10
5
0
0.1
16769
1.0
tp – Pulse width ( ms )
10.0
Fig. 5 Typ. Non Repetitive Forward Surge Current vs. Pulse width
LS103A / 103B / 103C
Vishay Semiconductors
Document Number 85631
Rev. 1.2, 22-Apr-04
www.vishay.com
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LS103A / 103B / 103C
Vishay Semiconductors
Package Dimensions in mm (Inches)
Cathode indification
VISHAY
0.47 max. (0.02)
3.5 ± 0.2 (0.14 ± 0.008)
Glass case
Quadro Melf / SOD 80
JEDEC DO 213 AA
ISO Method E
Glass
> R 3 (R 0.12)
Mounting Pad Layout
1.25 (0.049) min
2.50 (0.098) max
5 (0.197) ref
96 12071
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Document Number 85631
Rev. 1.2, 22-Apr-04

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VISHAY
LS103A / 103B / 103C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85631
Rev. 1.2, 22-Apr-04
www.vishay.com
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