M5M5V416WG-70LI.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 M5M5V416WG-70LI 데이타시트 다운로드

No Preview Available !

revision-W03, ' 98.12.16
MITSUBISHI LSIs
M5M5V416BWG
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs
organized as 262,144-words by 16-bit, f abricated by Mitsubishi's
high-perf ormance 0.25µm CMOS technology .
The M5M5V416B is suitable f or memory applications where a
simple interf acing , battery operating and battery backup are the
important design objectiv es.
M5M5V416BWG is packaged in a CSP (chip scale package),
with the outline of 7mm x 8.5mm, ball matrix of 6 x 8 (48pin) and
ball pitch of 0.75mm. It giv es the best solution f or a compaction
of mounting area as well as f lexibility of wiring pattern of printed
circuit boards.
From the point of operating temperature, the f amily is div ided
into three v ersions; "Standard", "W-v ersion", and "I-v ersion".
Version,
Operating
Part name
temperature
M5M5V416BWG -70L
M5M5V416BWG -85L
Standard M5M5V416BWG -10L
0 ~ +70°C M5M5V416BWG -70H
M5M5V416BWG -85H
M5M5V416BWG -10H
M5M5V416BWG -70LW
M5M5V416BWG -85LW
W-v ersion M5M5V416BWG -10LW
-20 ~ +85°C M5M5V416BWG -70HW
M5M5V416BWG -85HW
M5M5V416BWG -10HW
M5M5V416WG -70LI
M5M5V416BWG -85LI
I-v ersion M5M5V416BWG -10LI
-40 ~ +85°C M5M5V416BWG -70HI
M5M5V416BWG -85HI
M5M5V416BWG -10HI
PIN CONFIGURATION
(TOP VIEW)
Power
Supply
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
Access time
max.
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
70ns
85ns
100ns
1 23 4 56
A BC1 OE A0 A1 A2 S2
B DQ9 BC2 A3
A4 S1 DQ1
C DQ10 DQ11 A5
A6 DQ2 DQ3
D GND DQ12 A17 A7 DQ4 VCC
E VCC DQ13 GND A16 DQ5 GND
F DQ15 DQ14 A14 A15 DQ6 DQ7
Outline: 48FHA
NC: No Connection
G DQ16 N.C. A12 A13 W DQ8
H N.C. A8 A9 A10 A11 N.C.
Those are summarized in the part name table below.
FEATURES
Single +2.7~+3.6V power supply
Small stand-by current: 0.3µA(3V,ty p.)
No clocks, No ref resh
Data retention supply v oltage =2.0V to 3.6V
All inputs and outputs are TTL compatible.
Easy memory expansion by S1, S2, BC1 and BC2
Common Data I/O
Three-state outputs: OR-tie capability
OE prev ents data contention in the I/O bus
Process technology : 0.25µm CMOS
Package: 48pin 7mm x 8.5mm CSP
Stand-by c urrent Icc(PD), Vcc=3.0V
Activ e
ty pical *
Ratings (max.)
current
Icc1
25°C 40°C 25°C 40°C 70°C 85°C (3.0V, ty p.)
--- --- --- --- 20µA ---
0.3µA 1µA 1µA 3µA 10µA ---
--- ---
0.3µA 1µA
--- ---
--- --- 20µA 40µA
1µA 3µA 10µA 20µA
--- --- 20µA 40µA
40mA
(10MHz)
5mA
(1MHz)
0.3µA 1µA 1µA 3µA 10µA 20µA
* "ty pical" parameter is sampled, not 100% tested.
Pin Function
A0 ~ A17 Address input
DQ1 ~ DQ16 Data input / output
S1
S2
W
OE
BC1
BC2
Vcc
Chip select input 1
Chip select input 2
Write control input
Output enable input
Lower By te (DQ1 ~ 8)
Upper By te (DQ9 ~ 16)
Power supply
GND Ground supply
MITSUBISHI ELECTRIC
1

No Preview Available !

revision-W03, ' 98.12.16
MITSUBISHI LSIs
M5M5V416BWG
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
FUNCTION
The M5M5V416BWG is organized as 262,144-words by
16-bit. These dev ices operate on a single +2.7~3.6V power
supply , and are directly TTL compatible to both input and
output. Its f ully static circuit needs no clocks and no
ref resh, and makes it usef ul.
The operation mode are determined by a combination of
the dev ice control inputs BC1 , BC2 , S1, S2 , W and OE.
Each mode is summarized in the f unction table.
A write operation is executed whenev er the low lev el W
ov erlaps with the low lev el BC1 and/or BC2 and the low
lev el S1 and the high lev el S2. The address(A0~A17) must
be set up bef ore the write cy cle and must be stable during
the entire cycle.
A read operation is executed by s etting W at a high lev el
and OE at a low lev el while BC1 and/or BC2 and S1 and
S2 are in an activ e state(S1=L,S2=H).
When setting BC1 at the high lev el and other pins are in
an activ e stage , upper-by t e are in a selectable mode in
which both reading and writing are enabled, and lower-byte
are in a non-selectable mode. And when setting BC2 at a
high lev el and other pins are in an activ e stage, lower-
by t e are in a selectable mode and upper-by te are in a
non-selectable mode.
BLOCK DIAGRAM
When setting BC1 and BC2 at a high lev el or S1 at a high
lev el or S2 at a low lev el, the chips are in a non-selectable
mode in which both reading and writing are disabled. In this
mode, the output stage is in a high-impedance state, allowing
OR-tie with other chips and memory expansion by BC1, BC2
and S1, S2.
The power supply c urrent is reduced as low as 0.3µA(25°C,
ty pical), and the memory data can be held at +2V power
supply , enabling battery back-up operation during power
f ailure or power-down operation in the non-selected mode.
FUNCTION TABLE
S1 S2 BC1 BC2 W OE Mode DQ1~8 DQ9~16 Icc
H L X X X X Non selection High-Z High-Z Standby
L L X X X X Non selection High-Z High-Z Standby
H H X X X X Non selection High-Z High-Z Standby
X X H H X X Non selection High-Z High-Z Standby
L H L H L X Write Din High-Z Activ e
L H L H H L Read Dout High-Z Activ e
LH L H H H
High-Z High-Z Activ e
L H H L L X Write High-Z Din Activ e
L H H L H L Read High-Z Dout Activ e
LH H L H H
High-Z High-Z Activ e
L H L L L X Write Din Din Activ e
L H L L H L Read Dout Dout Activ e
LH L L H H
High-Z High-Z Activ e
A0
A1
MEMORY ARRAY
262144 WORDS
x 16 BITS
A16 -
A17
DQ
1
DQ
8
DQ
9
S1
CLOCK
GENERATOR
S2
DQ
16
BC1
BC2
Vcc
W
GND
OE
MITSUBISHI ELECTRIC
2

No Preview Available !

revision-W03, ' 98.12.16
MITSUBISHI LSIs
M5M5V416BWG
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Ratings
Units
Vcc Supply v oltage
VI Input v oltage
With respect to GND
With respect to GND
-0.5* ~ +4.6
-0.5* ~ Vcc + 0.5
V
VO Output v oltage
With respect to GND
0 ~ Vcc
Pd Power dissipation
Ta=25°C
700 mW
Operating
Ta
temperature
Standard
W-v ersion
I-v ersion
(-L, -H)
(-LW, -HW)
(-LI, -HI)
0 ~ +70
- 20 ~ +85
- 40 ~ +85
°C
T stg Storage temperature
- 65 ~ +150
°C
* -3.0V in case of AC (Pulse width <= 30ns)
DC ELECTRICAL CHARACTERISTICS
( Vcc=2.7 ~ 3.6V, unless otherwise noted)
Symbol
Parameter
Conditions
Limits
Min Ty p Max Units
VIH High-lev el input v oltage
2.2 Vcc+0.3V
VIL
V OH1
V OH2
V OL
II
IO
Icc1
Icc2
Low-lev el input v oltage
High-level output voltage 1
IOH= -0.5mA
High-level output voltage 2
IOH= -0.05mA
Low-lev el output v oltage IOL=2mA
Input leakage current
VI =0 ~ Vcc
Output leakage current BC1 and BC2=VIH or S1=VIH or S2=VIH or OE=VIH, VI/O=0 ~ Vcc
Activ e supply c urrent
( AC,MOS lev el )
BC1 and BC2<= 0.2V, S1<= 0.2V, S2 Vcc-0.2V
other inputs <= 0.2V or => Vcc-0.2V
Output - open (duty 100%)
f = 10MHz
f = 1MHz
Activ e supply c urrent
( AC,TTL lev el )
BC1 and BC2=VIL , S=V IL ,S2=V IH
other pins =V IH or VIL
Output - open (duty 100%)
f = 10MHz
f = 1MHz
-0.3 *
2.4
Vcc-0.5V
-
-
-
-
40
5
40
5
0.6
V
0.4
±1 µA
±1
50
10
mA
50
10
Icc3
Stand by s upply current
( AC,MOS lev el )
<1>
S1 => Vcc - 0.2V,
-LW, -LI
-L, -LW, -LI
other inputs = 0 ~ Vcc
<2>
-HW, -HI
S2 0.2V,
-H, -HW, -HI
other inputs = 0 ~ Vcc
<3>
BC1 and BC2 => Vcc - 0.2V
S1 <= 0.2V, S2 => Vcc - 0.2V
Other inputs=0~Vcc
-H
-HW
-HI
+70 ~ +85°C
+70°C
+70 ~ +85°C
+40 ~ +70°C
+25 ~ +40°C
0 ~ +25°C
- 20 ~ +25°C
- 40 ~ +25°C
-
-
-
-
-
-
-
-
- 48
- 24
- 24
- 12
µA
1 3.6
0.3 1.2
0.3 1.2
0.3 1.2
Icc4 Stand by s upply current BC1 and BC2=VIH or S1=VIH or S2=VIL
( AC,TTL lev el ) Other inputs= 0 ~ Vcc
- - 0.5 mA
Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical value is for Vcc=3.0V and Ta=25°C
* -3.0V in case of AC (Pulse width <= 30ns)
CAPACITANCE
Symbol
Parameter
CI Input capacitance
CO Output capacitance
Conditions
VI=GND, VI=25mVrms, f =1MHz
VO=GND,VO=25mVrms, f =1MHz
(Vcc=2.7 ~ 3.6V, unless otherwise noted)
Limits
Min Ty p Max
10
10
Units
pF
MITSUBISHI ELECTRIC
3