M62216FP.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 M62216FP 데이타시트 다운로드

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MITSUBISHI SEMICONDUCTOR<STD-Linear IC>
M62216FP/GP
Low Voltage Operation STEP-UP DC-DC Converter
DESCRIPTION
The M62216FP is designed as low voltage operation STEP-UP
DC-DC converter.
This IC can operate very low input voltage (over 0.9V) and low
power dissipation (circuit current is less than 850µA).
So, this IC suitable for power supply of portable system that
using low voltage battery (DRY battery, rechargeable battery).
FEATURES
• Pre-Drive type PWM output (Pre-Drive only)
• Low voltage Operation • • • • • • • • • • • • VIN=0.9V min.
• Low Current Dissipation • • • • • • • • • • • • IB=850µA typ.
• Pre-Drive output current can be adjusted
• Built-in ON/OFF Function • • • • • • • • • • IB(OFF)=35µA typ.
• Application for STEP-DOWN Converter can be used
PIN CONFIGURATION(TOP VIEW)
DRIVE2 1
DRIVE1 2
PWM 3
GND 4
8 BIAS
7 ON/OFF
6 IN
5 FB
OUTLINE: 8P2S-A(FP)
8P2X-A (GP)
APPLICATION
DC-DC Converter for portable sets of battery used
BLOCK DIAGRAM
VREF
ON/OFF
7
Iconst
OSC
8 BIAS
1 DRIVE2
2 DRIVE1
Amp
65
IN FB
PWM Comp
Start
Start OSC
4
GND
3 PWM
(1/ 8)
9812

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MITSUBISHI SEMICONDUCTOR<STD-Linear IC>
M62216FP/GP
Low Voltage Operation STEP-UP DC-DC Converter
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise noted)
Symbol
Parameter
Condition
Ratings
VIN
VBIAS
VDRIVE1
VDRIVE2
IDRIVE1
IDRIVE2
Pd
Topr
Tstg
Input Voltage
Bias Terminal Supply Voltage
Drive1 Terminal Supply Voltage
Drive2 Terminal Supply Voltage
Drive1 Terminal Input Current
Drive2 Terminal Input Current
Power Dissipation
Operating Temperature
Storage Temperature
Ta=25°C
15.5
15.5
15.5
15.5
100
10
440 (FP) 250 (GP)
-20 ~+85
-40 ~+150
Unit
V
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, VIN=1.7V, VOUT=VBIAS=3.0V, unless otherwise noted)
Block Symbol
Parameter
Test Condition
Limits
Min. Typ.
Max.
Unit
VIN Input Voltage Range
0.9 15 V
All VBIAS
Device IB
BIAS Voltage Setting Range *1
BIAS Current
1.7 15 V
850 1200 µA
IB(OFF) BIAS Current at OFF Mode
35 47 µA
Voltage VREF
Reference VREF
Reference Voltage
Use internal amp as Buffer-amp 1.20 1.26 1.32 V
BIAS Voltage Regulation of VREF VBIAS=1.7~15V
10 30 mV
IIN Input Current
IN = 1V / IM
20 nA
Error AV
Amp. IFB+
Open Loop Voltage Gain
FB Terminal Sink Current
fIN = 100Hz , Null Amp Operation
IN = 1.4V , FB = 1.25V / IM
70
260 800
dB
µA
IFB- FB Terminal Source Current IN = 1.1V , FB = 1.25V / IM 30 45 60 µA
Osc.
fosc Oscillation Frequency
PWM Terminal Monitored
DUTYmax
Vsat1
Vsat2
Maximum ON Duty
Saturation Voltage between
PWM Term. and DRIVE1 Term.
Saturation Voltage between
PWM Term. and DRIVE2 Term.
PWM Terminal Monitored , IN = 1.1 V
IDRIVE1=50mA,
IDRIVE2=5mA
IL1 Leak Current of DRIVE1 Terminal IN = 1.4V
95 125 155 kHz
82 87 92 %
0.25 0.5 V
1.0 1.2 V
-1 1 µA
IL2
VPWM(L)
ION
ON/OFF VTH(ON)
Leak Current of DRIVE2 Terminal IN = 1.4V
Output Low Voltage of PWM Terminal IPWM = 1mA
Input Current of ON/OFF Terminal
At ON Status
Threshold Voltage of ON/OFF
Terminal
-1 1 µA
0.03 0.3 V
2 3 µA
0.65 0.75 V
*1 : Setting range of BIAS voltage as same as setting range of output voltage .
(2/ 8)

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MITSUBISHI SEMICONDUCTOR<STD-Linear IC>
M62216FP/GP
Application circuit
Low Voltage Operation STEP-UP DC-DC Converter
(1). Standard Application circuit
VIN
L
CIN
7
ON/OFF
BIAS 8
DRIVE1 1
DRIVE2 2
IN FB
65
PWM 3
GND
4
Di
RD2
RD1
Tr
VOUT
CO
R1
R2
VIN : 0.9 ~ 14V
VOUT : 1.7 ~ 15V
(VOUT > VIN)
(2). Application circuit 1 (VIN 1.7V)
VIN
CIN
7
ON/OFF
BIAS 8
DRIVE2 1
DRIVE1 2
IN FB
65
PWM 3
GND
4
L Di
RD2
RD1
Tr
VOUT
CO
R1
VIN : 1.7 ~ 14V
VOUT : 2.5V ~ 15V
( VOUT > VIN)
R2
(3). Application circuit 2 (VOUT > 15V)
VIN
L
CIN 7
ON/OFF
BIAS 8
RD2
DRIVE2 1
RD1
DRIVE1 2
Tr
IN FB
65
PWM 3
GND
4
Di VOUT
CO
R1
VIN : 1.7 ~ 15V
VOUT : 15V ~
( VOUT > VIN)
R2
(4). Application circuit for STEP-DOWN Circuit
VIN
Tr
CIN
7
ON/OFF
BIAS 8
DRIVE2 1
DRIVE1 2
RD2
RD1
IN FB
65
PWM 3
GND
4
L VOUT
CO
R1
Di
VIN : 2.0 ~ 15V
VOUT : 1.7V ~ 14V
( VOUT < VIN)
R2
(3/ 8)