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March 2016
MJD122
NPN Silicon Darlington Transistor
Features
• D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications
• Electrically Similar to Popular TIP122
• Complement to MJD127
1 D-PAK
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
B
R1
R1 8k
R2 0.12k
R2
E
Ordering Information
Part Number
MJD122TF
Top Mark
MJD122
Package
TO-252 3L (DPAK)
Packing Method
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be oper-
able above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC = 25C)
Collector Dissipation (TA = 25C)
Junction Temperature
Storage Temperature
100
100
5
8
16
120
20
1.75
150
- 65 to 150
V
V
V
A
A
mA
W
W
C
C
© 1999 Fairchild Semiconductor Corporation
MJD122 Rev. 2.4
www.fairchildsemi.com

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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
VCEO(sus) Collector-Emitter Sustaining Voltage(1)
Test Condition
IC = 30 mA, IB = 0
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Cob
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(1)
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
Output Capacitance
VCE = 50 V, IB = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 4 A
VCE = 4 V, IC = 8 A
IC = 4 A, IB = 16 mA
IC = 8 A, IB = 80 mA
IC = 8 A, IB = 80 mA
VCE = 4 V, IC = 4 A
VCB = 10 V, IE = 0
f= 0.1MHz
Note:
1. Pulse test: pw300 s, duty cycle 2%.
Min.
100
1000
100
Max.
10
10
2
12K
2
4
4.5
2.8
200
Units
V
A
A
mA
V
V
V
V
pF
© 1999 Fairchild Semiconductor Corporation
MJD122 Rev. 2.4
2
www.fairchildsemi.com

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Typical Performance Characteristics
10k
VCE = 4V
1k
10
VBE(sat)
1
VCE(sat)
0.1
IC = 250 IB
100
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
100
10
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
VCC= 30V
IC=250IB
IB1=IB2
1
tR
tD, VBE(off)=0
0.1
1
0.1 1
10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10
VCC=30V
IC=250IB
tSTG
1 tF
0.1
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
10
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
10
100
10
1
DC5m1sm5s0010s0s
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Safe Operating Area
© 1999 Fairchild Semiconductor Corporation
MJD122 Rev. 2.4
3
www.fairchildsemi.com

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Typical Performance Characteristics (Continued)
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating Curve
© 1999 Fairchild Semiconductor Corporation
MJD122 Rev. 2.4
4
www.fairchildsemi.com

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F
0.90
0.50
F
6.80 A
6.40
6.30
5.90
F
2.90
2.50 1
0.64
0.86
0.66
2
3C
0.96 MAX
2.48
2.08
F
5.64
5.04
4.83 MIN
6.80
2
5.55 MIN
2
6.50 MIN
6.40
2.85 MIN
13
2.28
4.56
1.25 MIN
LAND PATTERN RECOMMENDATION
B
F
2.40
2.20
F
0.60
0.40
F
9.80
9.20
SEE DETAIL A
0.10 B
GAGE PLANE
F 1.02
1.57
NOTES:UNLESS OTHERWISE SPECIFIED
A) NOT COMPLIANT TO JEDEC TO-252 VARIATION AB
B) ALL DIMENSION ARE IN MILLIMETER
0.127 MAX
C)
DIMENSIONS ARE EXCLUSIVE OF BURRS,MOLD FLASH,
AND TIE BAR EXTRUSIONS
SEATING PLANE
D) LAD PATTERN PER IPC7351A ATANDARD
TO228P991X239-3N
E) DRAWING FILE NAME:MKT-TO252D03REV3.
F) DOES NOT COMPLY JEDEC STANDARD VALUE.
G) FAIRCHILD SEMICONDUCTOR.
DETAIL A
SCALE 10 : 1
F
0.60
0.40
0.55 MIN
F