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MJD31B/31C
® MJD32B/32C
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
s ELECTRICALLY SIMILAR TO TIP31B/C AND
TIP32B/C
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER TRANSISTORS
DESCRIPTION
The MJD31B and MJD31C and the MJD32B and
MJD32C form complementary NPN-PNP pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collect or-Base Voltage (IE = 0)
VCEO Collect or-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current
IB Base Current
Ptot Tot al Dissipation at Tc = 25 oC
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types the values are intented negative.
May 1999
NPN
PNP
Value
MJD31B
MJD31C
MJD32B
MJD32C
80 100
80 100
5
3
5
1
15
-65 to 150
150
Uni t
V
V
V
A
A
A
W
oC
oC
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MJD31B/31C - MJD32B/32C
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Rthj- amb Thermal Resistance Junction-ambient
Max
Max
8 .3 3
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
S ymb ol
P a ra m et er
Test Conditions
ICES
ICEO
IEBO
VCEO(sus)
Collector Cut-off
Current (VBE = 0)
Collector Cut-off
Current (IB = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Sustaining Voltage
VCE = Max Rating
VCE = 60 V
VEB = 5 V
IC = 30 mA
for MJD31B/32B
for MJD31C/32C
VCE(sat)Collector-Emitter
Saturation Voltage
IC = 3 A
IB = 375 mA
VBE(on)Base-Emitt er Voltage
hF EDC Current Gain
IC = 3 A
IC = 1 A
IC = 3 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
hfe Dynamic Current Gain IC = 0.5 A
IC = 0.5 A
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
For PNP type voltage and current values are negative.
VCE = 10 V f = 1 KHz
VCE = 10 V f = 1 MHz
Min.
80
100
25
10
20
3
Typ .
Max.
20
50
0.1
1.2
1.8
50
Unit
µA
µA
mA
V
V
V
V
Safe Operating Area
Derating Curves
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DC Current Gain (NPN type)
MJD31B/31C - MJD32B/32C
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Collector-Base Capacitance (PNP type)
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MJD31B/31C - MJD32B/32C
DIM.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
TO-252 (DPAK) MECHANICAL DATA
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0o
mm
TYP.
0.8
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1.00
8o
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.024
0o
inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
0.039
0o
P032P_B
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MJD31B/31C - MJD32B/32C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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