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MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
COMPLEMENTARY
COLLECTOR
2,4
COLLECTOR
2,4
MAXIMUM RATINGS
Rating
Symbol Max Unit
1
BASE
1
BASE
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
VCEO
Vdc
40
100
3
EMITTER
3
EMITTER
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
VCB Vdc
40
100
VEB 5.0 Vdc
IC 3.0 Adc
ICM 5.0 Adc
IB 1.0 Adc
PD W
15 W/°C
0.12
PD W
1.56 W/°C
0.012
4
12
3
DPAK
CASE 369C
STYLE 1
4
1
2
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
Operating and Storage Junction Temperature
Range
ESD − Human Body Model
TJ, Tstg
HBM
−65 to
+ 150
3B
°C
V
AYWW
J3xxG
YWW
J3xxG
ESD − Machine Model
MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
DPAK
A
Y
WW
xx
G
IPAK
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
RqJC
RqJA
TL
8.3 °C/W
80 °C/W
260 °C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 16
1
Publication Order Number:
MJD31/D

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MJD31 (NPN), MJD32 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
MJD31, MJD32
MJD31C, MJD32C
VCEO(sus)
Vdc
40 −
100
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, MJD32
(VCE = 60 Vdc, IB = 0)
MJD31C, MJD32C
ICEO
mAdc
50
50
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
ICES
IEBO
mAdc
20
mAdc
1
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
25
10
50
Vdc
1.2
Vdc
1.8
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT MHz
3−
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = hfe⎪• ftest.
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TA TC
2.5 25
2 20
1.5 15
1 10
0.5 5
00
25
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS
VCC
+ 30 V
TA (SURFACE MOUNT)
TC
50 75 100 125
T, TEMPERATURE (°C)
Figure 1. Power Derating
+11 V
0
25 ms
- 9 V
RB
51
RC
SCOPE
D1
tr, tf 10 ns
DUTY CYCLE = 1%
- 4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
 D1 MUST BE FAST RECOVERY TYPE, e.g.:
  1N5825 USED ABOVE IB 100 mA
  MSD6100 USED BELOW IB 100 mA
150 REVERSE ALL POLARITIES FOR PNP.
Figure 2. Switching Time Test Circuit
2
1 tr @ VCC = 30 V
0.7
0.5
0.3 tr @ VCC = 10 V
IC/IB = 10
TJ = 25°C
0.1
0.07 td @ VBE(off) = 2 V
0.05
0.03
0.02
0.03
0.05 0.07 0.1
0.3 0.5 0.7 1
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
100
Duty Cycle = 0.5
0.2
0.1
10 0.05
0.02
1 0.01
3
2
ts
1 tf @ VCC = 30 V
0.7
0.5
0.3 tf @ VCC = 10 V
0.2
IB1 = IB2
IC/IB = 10
ts= ts - 1/8 tf
TJ = 25°C
0.1
0.07
0.05
0.03
0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Turn−Off Time
23
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (sec)
Figure 5. Thermal Response
1
10 100 1000
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MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
150°C
100
25°C
−55°C
VCE = 4 V
1000
150°C
100
25°C
−55°C
10 10
VCE = 2 V
1
0.01
0.1
1
1
10 0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at VCE = 4 V
IC, COLLECTOR CURRENT (A)
Figure 7. DC Current Gain at VCE = 2 V
0.6
IC/IB = 10
0.5
0.4
150°C
0.3
0.2
25°C
0.1
−55°C
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 8. Collector−Emitter Saturation Voltage
1.2
1.1 IC/IB = 10
1.0
0.9 −55°C
0.8
25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
10
1.2
VCE = 5 V
1.1
1.0
0.9
0.8 −55°C
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Base-Emitter “On” Voltage
2
TA =
25°C
1.6
1.2
100 mA 500 mA
0.8 IC = 3 A
1A
0.4
10 mA
0
10 0.01
0.1
1
10 100 1000
IB, BASE CURRENT (mA)
Figure 11. Collector Saturation Region
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1000
100
10
1
0.1
MJD31 (NPN), MJD32 (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
TA = 25°C
100
Cib
Cob 10
VCE = 5 V
TA = 25°C
1 10
VR, REVERSE VOLTAGE (V)
Figure 12. Capacitance
10
1
100 0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
1
0.1
0.01
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
100
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