MJD42C.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 MJD42C 데이타시트 다운로드

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MJD42C
General Purpose Amplifier
Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP42C
1 D-PAK 1 I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-6
-10
-2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICES
IEBO
hFE
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter ON Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW300µs, Duty Cycle2%
IC = - 30mA, IB = 0
VCE = -60V, IB = 0
VCE = -100V, VBE = 0
VBE = -5V, IC = 0
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
IC = -6A, IB = -600mA
VCE = -6A, IC = -4A
VCE = -10V, IC = -500mA
Min.
-100
30
15
3
Max.
-50
-10
-0.5
Units
V
µA
µA
mA
75
-1.5 V
-2 V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001

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Typical Characteristics
1000
100
V = -2V
CE
10
1
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
-10
1000
100
10
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Capacitance
10
VCC = -30V
IC = 10.IB
1 tSTG
0.1 tF
0.01
-0.01
-0.1 -1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2001 Fairchild Semiconductor Corporation
-10
-10
-1 VBE(sat)
I = 10 I
CB
-0.1
VCE(sat)
-0.01
-0.01
-0.1 -1
IC[A], COLLECTOR CURRENT
-10
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
VCC = -30V
IC = 10.IB
1
0.1
0.01
-0.01
tR
tD VBE(off)=-5V
-0.1 -1
I [A], COLLECTOR CURRENT
C
Figure 4. Turn On Time
-10
-100
I (max)
CP
-10
IC(max)
-1
-0.1
1ms500
100
µs
µs
5ms
DC
-0.01
-1
-10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1000
Figure 6. Safe Operating Area
Rev. A2, June 2001

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Typical Characteristics (Continued)
25
20
15
10
5
0
0 25 50 75 100 125 150 175
T [oC], CASE TEMPERATURE
C
Figure 7. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001

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Package Demensions
D-PAK
(0.50)
6.60 ±0.20
5.34 ±0.30
(4.34)
(0.50)
2.30 ±0.10
0.50 ±0.10
MAX0.96
2.30TYP
[2.30±0.20]
0.76 ±0.10
2.30TYP
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
(2XR0.25)
0.76 ±0.10
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A2, June 2001

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As used herein:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3